An amorphous silicon photodiode array for glass-based optical MEMS application

Moridi, Mohssen; Tanner, Steve; Wyrsch, Nicolas; Farine, Pierre André; Rohr, Stephan

doi:10.1109/icsens.2009.5398496

Cited by 4 publications

(1 citation statement)

References 24 publications

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“…Glass is a key material for various applications such as microfluidic, [1][2][3][4] optical MEMS, [5][6][7] and photonic devices, [8,9] due to its chemical and mechanical stability, cost-effectiveness, and optical characteristics. In order to fabricate these devices, the glass-to-glass bonding should be realized for packaging and assembly, especially in a wafer-or panel-level.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Takeuchi

Matsumoto³

et al. 2021

Adv Materials Inter

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applications, the glass bonding should not deteriorate the transparency at the interface for efficient light transmission. Moreover, voids at the bonding interface are obstacles as they lead to a topical decrease in transparency. For these reasons, the indirect bonding of glass using adhesive including epoxy and UV-curing resins is not appropriate since the adhesive layer deteriorates the optical characteristics and the sealing performance especially against water permeation. Hence, a direct glass bonding is highly required for the fabrication of reliable applications. The direct bonding of glass has been studied for a long time. One popular method is hydrophilic bonding, in which the glass surfaces are treated to achieve OH groups, followed by the post-bonding annealing at over 600 °C to achieve covalent bonds between the glass surfaces. In this method, the OH groups and water on the bonding surfaces are decomposed and the generated H 2 diffuses into the amorphous structure of glass (2Si-OH  →  Si-O-Si + H 2 O, Si + 2H 2 O  →  SiO 2 + 2H 2). [10-12] However, the high temperature annealing process will lead to damage at the bonding interface, which is induced by residual stress due to the mismatch of the coefficient of thermal expansion. The high temperature process also leads to damage to heat-sensitive components including electrodes, enzymes, and light sources. Furthermore, the decomposed H 2 O and OH groups can be trapped at the bonding interface, resulting in interfacial voids. [10,13] Therefore, glass bonding at room temperature is a desirable process. In order to lower the post-bonding annealing temperature, hydrophilic bonding has been modified mainly by using surface activation such as plasma and UV in the previous studies. The surface activation using O 2 and/or N 2 plasmas has been widely investigated to increase the OH groups on the glass surface. [14-16] For the surface activation by UV irradiation, the organic contamination on the surface is removed using O 3 induced by UV. In the meantime, the hydrophilicity of the glass surface is improved. [17,18] However, since the hydrophilic bonding mechanism is the polymerization of OH groups, a post-bonding annealing at over 200 °C is usually necessary for strong bonding. Recently, surface activated bonding (SAB) has been developed to bond inorganic materials at room temperature. [19-21] In its standard process, the bonding surfaces are treated with This paper presents a room temperature bonding technique of glass substrates with a transparent bonding interface. As a room temperature bonding method, surface activated bonding (SAB) is applied for the bonding of glass using Si intermediate layer. However, the bonding interface is colored by the deposited Si layers, which leads to lower applicability to optical devices. In this study, a new concept of SAB is developed using aluminum oxide intermediate layer. Glass substrates are successfully bonded at room temperature via the aluminum oxide intermediate layers activated by Ar ion beam irradiation, showing a...

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