Characterization of 4H-SiC grown on AlN/Si(100) by CVD

Qin, Zhengyuan; Han, Pin; Han, Tiancheng; Jiang, Nan; Xu, Shuyan; Shi, Jianjun; Zhu, Jinhui; Xie, Zili; Xiu, Xiangqian; Gu, Shulin; Zhang, R.; Zheng, Youdou

doi:10.1016/j.tsf.2005.12.173

Cited by 15 publications

(5 citation statements)

References 13 publications

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“…There is single peak at 28=35.60. No other diffraction peaks observed indicates that the SiC epilayer has a good crystal orientation [12]. Raman scattering spectra [13,14].…”

Section: Fig 2 Sem Images Of the Surface Of Sic Thin Filmmentioning

confidence: 99%

The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

Zhang

Yang

Jia

et al. 2012

2012 International Conference on Computer Science and Information Processing (CSIP)

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The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24xlO-8A at 4V bias, and the average capacitance is 82.66pF at 0-5V voltage range. The spectral response range is from 250nm to 350nm wavelength, and the highest responsivity appears at the wavelength of 280nm. The results indicate that the 4H-SiC photodetectors are visible-blind. Keywords-4H-SiC; ultraviolet(UV) photodetector; metal semiconductor-metal (MSM) I.

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“…There is single peak at 28=35.60. No other diffraction peaks observed indicates that the SiC epilayer has a good crystal orientation [12]. Raman scattering spectra [13,14].…”

Section: Fig 2 Sem Images Of the Surface Of Sic Thin Filmmentioning

confidence: 99%

The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

Zhang

Yang

Jia

et al. 2012

2012 International Conference on Computer Science and Information Processing (CSIP)

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“…7,8) Since mismatches in lattice constant and thermal expansion coefficient between aluminum nitride and SiC are very small, AlN could be a promising material for an intermediate layer in the high-quality SiC growth on Si. Several works have been made on the SiC heteroepitaxy on AlN [9][10][11][12][13] and a few others focused also on graphene/SiC/AlN/Si(111) and graphene/SiC/AlN/Si(100) multilayer structures. 14,15) Furthermore, AlN layers have successfully prevented the formation of hollow voids during the SiC or graphene growth.…”

Section: Introductionmentioning

confidence: 99%

Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

Narita¹,

Nara²,

Enta³

et al. 2019

Jpn. J. Appl. Phys.

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A cubic silicon carbide (3C-SiC) film was fabricated by pulsed laser deposition on an aluminum nitride layer grown on an off-axis Si(110) substrate. This is the first report about the use of off-axis Si(110) substrates for manufacturing SiC/AlN/Si multilayers. A high-quality epitaxial 3C-SiC(111) film without rotation domains or twins, as evidenced by reflection high-energy electron diffraction (RHEED) measurements, was successfully obtained by using a wurtzite AlN(0001)/off-axis Si(110) substrate. On this 3C-SiC film, graphene was formed through annealing in ultrahigh vacuum at 1200 °C and its structure and chemical bonding were investigated via in situ RHEED and X-ray photoelectron spectroscopy; the full width at half maximum of the C 1s core level peak and the root-mean-square surface roughness were 0.60 eV and 0.14 nm, respectively, which were substantially lower than those (0.73 eV and 1.44 nm) previously reported for a graphene sample with similar thickness but formed on a SiC/AlN/onaxis Si(110) substrate.

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“…[12][13][14][15] Many groups have reported that hexagonal (4H or 6H) SiC was successfully grown on c-plane sapphire (0001) substrate using a thin AlN buffer layer deposited first by CVD, [12,14] by MBE, [14,16] or by HVPE. [16] A 6H-SiC polytype, grown on AlN/sapphire, is often determined by Raman spectroscopy, which demonstrates a low intensity peak at 765 -767 cm −1 as a shoulder of a predominant peak at 797 cm −1 (TO band) [12][13][14][15][16] while in other researches, the low intensity shoulder observed near the TO band may indicate that the SiC layer is composed of randomly disordered simple polytype domains such as 3C, 6H, 4H, 15R, etc.. [17,18] Thus, it can be concluded that Raman spectroscopy cannot distinguish between polytypes. Li et al [14] have identified the 4H-SiC by photoluminescence (PL) measurement, which presents a broad band at around 3.3 eV; however, the room-temperature energy bandgaps for 2H-SiC (about 3.3 eV) and for 4H-SiC (about 3.27 eV) [19] cannot be distinguished by the PL spectra.…”

Section: Introductionmentioning

confidence: 99%

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Luong

Tran

et al. 2015

Electron. Mater. Lett.

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Characterization of 4H-SiC grown on AlN/Si(100) by CVD

Cited by 15 publications

References 13 publications

The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

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