Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Nakao, Hidenobu; Mikami, Hideno; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi

doi:10.4028/www.scientific.net/msf.527-529.1293

Cited by 16 publications

(7 citation statements)

References 6 publications

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“…The reduction of the channel resistance is one of the most efficient ways of improving the performance of SiC-MOSFETs. Besides the planar channel SiC-MOSFET, a trench-gate structure is expected to have a lower R on due to the high cell density and high channel mobility on the sidewall [15][16][17]. Figures 8 and 9 show a schematic top view and a cross section of a trench MOSFET, respectively.…”

Section: Development Of Trench Channel Sic-mosfetmentioning

confidence: 99%

Practical applications of SiC-MOSFETs and further developments

Furuhashi

Tomohisa

Kuroiwa

et al. 2016

Semicond. Sci. Technol.

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The next generation power modules using SiC-MOSFETs have been developed for over ten years. From our successful results, we have released SiC power modules which have been used in railway vehicles, industrial machines and home appliances, etc. Low on-resistance 3.3 kV SiC-MOSFETs have been realized by JFET doping and they demonstrated a loss reduction of 55% in a traction inverter compared to a conventional system. In the case of a 1.2 kV MOSFET, a 1 cm 2 die verified that it can control a large current of over 600 A. For home appliances, we reduce the trade-off between the threshold voltage and channel mobility by a new gate oxide process. High threshold voltage SiC-MOSFETs having a low onresistance contribute to the low cost installation of SiC-MOSFETs into air conditioners and achieved a loss reduction of 45% in DC converters. For further reduction of conduction loss, we investigated new structures and technologies. Trench SiC-MOSFETs having a bottom p-well verify lower on-resistance and a larger SCSOA than those of planar MOSFETs. The optimization of the dopant concentration in the drift layer and a reduction of wafer thickness verified the reduction of on-resistance. They are expected to contribute to a lower power loss.

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Section: Development Of Trench Channel Sic-mosfetmentioning

confidence: 99%

Practical applications of SiC-MOSFETs and further developments

Furuhashi

Tomohisa

Kuroiwa

et al. 2016

Semicond. Sci. Technol.

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“…SiC trench MOSFETs can have lower conductive losses when compared with planar MOSFETs because planar MOSFETs have JFET regions which increase the onresistance 2,3 . We previously reported 790 V SiC trench MOSFETs with the lowest Ron at room temperature.…”

Section: Sic Double-trench Mosfetsmentioning

confidence: 99%

SiC Trench Devices with Ultra Low Ron

et al. 2013

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SiC devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. This paper presents SiC diodes and MOSFETs with advanced trench structures. These devices succeeded in improving performance by reduction of the internal electric field. Trench Schottky diodes are able to reduce forward voltage drop and double-trench MOSFETs show extremely low on-resistance.

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“…[12][13][14][15] It is known, however, that trench MOSFETs fabricated on off-axis substrates have anisotropic electrical properties. 14,[16][17][18][19][20] Recently, we reported the anisotropic channel mobility of 4H-SiC trench MOSFETs fabricated on various off-axis substrates. 20) According to that research, f11 20g faces tilted toward the [000 1] direction had high channel mobility, but f11 20g faces tilted toward the [0001] direction had low channel mobility.…”

Section: Hmentioning

confidence: 99%

Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

Ueoka

Shingu

Yano

et al. 2012

Jpn. J. Appl. Phys.

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The origin of anisotropic electrical properties on 4H-SiC trench metal–oxide–semiconductor field-effect transistors (MOSFETs) with large off-axis angles has been discussed from the viewpoints of charge pumping current and surface roughness. The channel mobility (µch) on (112̄0) tilted toward [0001̄] was high and that on (1̄1̄20) tilted toward [0001] was low. The roughness at the SiC/SiO2 interfaces was measured after the removal of the oxide. A rough surface was observed on (1̄1̄20). A locally thick gate oxide results in a nonuniform inversion layer, which is the main origin of the anisotropic electrical properties of the trench MOSFETs on off-axis substrates.

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Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Cited by 16 publications

References 6 publications

Practical applications of SiC-MOSFETs and further developments

Practical applications of SiC-MOSFETs and further developments

SiC Trench Devices with Ultra Low Ron

Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

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