Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Craig, Adam; Carrington, Peter J.; Liu, Huiyun; Marshall, Andrew

doi:10.1016/j.jcrysgro.2015.11.025

Cited by 14 publications

(22 citation statements)

References 24 publications

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“…3(b)). This can be attributed to the threading dislocations in agreement with previous reports for GaSb grown on Si [20]. The small peak on the left side of the InAsSb LED peak is attributed to the AlAsSb barrier.…”

Section: Resultssupporting

confidence: 91%

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

et al. 2019

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Silicon photonics has emerged as the most promising technology for nextgeneration compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonidebased compound semiconductor materials on silicon provides a pathway toward the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-in device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO 2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate midinfrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.

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Section: Resultssupporting

confidence: 91%

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

et al. 2019

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“…After the growth of a further GaAs buffer layer of 10 nm, the As source was shut for 1 minute to minimise the As background, followed by a 10 s growth interrupt to desorb the As surface layer from the sample. This was in preparation for the growth of the GaSb via the interface misfit method 30 , needed for the transition to the ~6.1 Å lattice constant of the active layers of the device. Following the initial introduction of Sb 2 flux from a valved cracker source, the substrate temperature was decreased to 500 °C and a 630-nm-thick GaSb layer was grown.…”

Section: Methodsmentioning

confidence: 99%

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Tizno

Marshall

Fernández‐Delgado

et al. 2019

Sci Rep

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Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 10 4 s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.

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“…We want to emphasize the fact that our 5 μm thick GaSb on the Si sample (3 μm GaSb buffer + 2 μm InGaSb/GaSb MQW LED epi structure) has a TDD lower than the lowest TDD reported previously. Table lists the GaSb buffer structures on Si and TDD values of previous results from other groups. ,,,,,, Interestingly, other authors from refs and reported that use of SLS is effective in reducing TDD. We believe that it is due to the different SLS structure.…”

Section: Resultsmentioning

confidence: 93%

“…Table 2 lists the GaSb buffer structures on Si and TDD values of previous results from other groups. 7,9,20,21,27,28,34 Interestingly, other authors from refs 9 and 21 reported that use of SLS is effective in reducing TDD. We believe that it is due to the different SLS structure.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes

Yeon,

Woo,

Chu

et al. 2023

ACS Appl. Mater. Interfaces

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Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach for achieving a low-cost, compact, and scalable infrared photonics platform. While tremendous efforts have been put into reducing dislocation densities by using various defect filter layers, exploring other types of extended crystal defects that can exist on GaSb/Si buffers has largely been neglected. Here, we show that GaSb growth on Si generates a high density of micro-twin (MT) defects as well as threading dislocations (TDs) to accommodate the extremely large misfit between GaSb and Si. We found that a 250 nm AlSb single insertion layer is more effective than AlSb/GaSb strained superlattices in reducing both types of defects, resulting in a 4× and 13× reduction in TD density and MT density, respectively, compared with a reference sample with no defect filter layer. InGaSb quantum well light-emitting diodes were grown on the GaSb/Si templates, and the effect of TD density and MT density on their performance was studied. This work shows the importance of using appropriate defect filter layers for high performance GaSb-based optoelectronic devices on standard on-axis (001) Si via direct epitaxial growth.

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Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Cited by 14 publications

References 24 publications

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes

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