Characterization of a high power GaN device for class E PA design with non-sinusoidal stimulus

Abstract

This paper presents the campaign for the characterization of a GaN packaged power transistor, with the aim to test the foundry model accuracy in a non-conventional mode of operation. In particular, the device is adopted for the design of a 30 W, 435 MHz class E power amplifier to be inserted in a radio-frequency pulse-width-modulator for space application. Due to the biasing class of operation (class C), the conditions normally used for modelling are very different to the current design in terms of driving waveform (non-sinusoidal) and high order harmonics' terminations (in open circuit). In this framework, this campaign allowed for verification of the model accuracy, hence increasing the probability of success of the final design. The adopted measurement set-up and the characterization results are discussed in details

A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation

“…The second one, on the contrary, has a lower level of power dissipation but forces the device to sustain high electric fields. That is a class-E condition [45,46], which is characterized by a load line that reaches very high drain voltage values [47,48]. We want to point out that the effects of high temperature and electric fields can be (and usually are) investigated by DC measurements.…”