Characterization of a magnetron sputtering discharge with simultaneous RF- and DC-excitation of the plasma for the deposition of transparent and conductive ZnO:Al-films

Ellmer, K.; Cebulla, R.; Wendt, R.

doi:10.1016/s0257-8972(97)00253-3

Cited by 23 publications

(17 citation statements)

References 7 publications

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“…It can be seen that at the same deposition rate, realized by different discharge powers for DC (25 W) and RF excitation (100 W), the O 2 -partial pressure where the minimum resistivity is obtained is significantly lower for RF-, compared to DC-excitation. This, we ascribe to the much higher density of reactive oxygen species (O, O*, O + ) in the RF discharge, which was measured already in 1998 by us for the reactive magnetron sputter deposition of ZnO:Al films [47]. The minimum resistivity is about the same for both excitation modes (ρ min ≈ 5 × 10 −3 Ωcm); however, the width of the minimum is significantly wider in case of DC plasma excitation.…”

Section: Resistivitysupporting

confidence: 50%

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Mientus¹,

Weise²,

Seeger³

et al. 2020

Coatings

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By reactive magnetron sputtering from a ceramic SnO2:Ta target onto unheated substrates, X-ray amorphous SnO:Ta films were prepared in gas mixtures of Ar/O2(N2O, H2O). The process windows, where the films exhibit the lowest resistivity values, were investigated as a function of the partial pressure of the reactive gases O2, N2O and H2O. We found that all three gases lead to the same minimum resistivity, while the width of the process window is broadest for the reactive gas H2O. While the amorphous films were remarkably conductive (ρ ≈ 5 × 10−3 Ωcm), the films crystallized by annealing at 500 °C exhibit higher resistivities due to grain boundary limited conduction. For larger film thicknesses (d ≳ 150 nm), crystallization occurs already during the deposition, caused by the substrate temperature increase due to the energy influx from the condensing film species and from the plasma (ions, electrons), leading to higher resistivities of these films. The best amorphous SnO2:Ta films had a resistivity of lower than 4 × 10−3 Ωcm, with a carrier concentration of 1.1 × 1020 cm−3, and a Hall mobility of 16 cm2/Vs. The sheet resistance was about 400 Ω/□ for 100 nm films and 80 Ω/□ for 500 nm thick films. The average optical transmittance from 500 to 1000 nm is greater than 76% for 100 nm films, where the films, deposited with H2O as reactive gas, exhibit even a slightly higher transmittance of 80%. These X-ray amorpous SnO2:Ta films can be used as low-temperature prepared transparent and conductive protection layers, for instance, to protect semiconducting photoelectrodes for water splitting, and also, where appropriate, in combination with more conductive TCO films (ITO or ZnO).

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Section: Resistivitysupporting

confidence: 50%

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Mientus¹,

Weise²,

Seeger³

et al. 2020

Coatings

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“…With this configuration, the resistivity increase at the location on the substrate surface that corresponds to the erosion area of the target in films prepared by dc-MSD was always higher than that in films prepared by rf-MSD or rf+dc-MSD [32]. The increase in resistivity is attributable to an enhancement in the amount and activity of oxygen that reaches the location on the substrate surface corresponding to the erosion area of the target, resulting from negatively ionized oxygen accelerated by the higher d.c. sputter voltage in dc-MSD than in rf-MSD or rf+dc-MSD [28,32,[34][35][36][37][38][39]. In the current work using moving substrates during the deposition, the amount of resistivity obtainable in the thin films exhibits an average value that is related to the resistivity distribution that results from depositions on the surface of fixed substrates.…”

Section: Influence Of Doped Impurity and Deposition Methods On Electrimentioning

confidence: 99%

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Minami

Miyata

Nomoto

2012

IOP Conf. Ser.: Mater. Sci. Eng.

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“…However, the plasma potential is positive with respect to ground, so Ellmer et al 41 Ϫ , are also produced in the plasma. Positive ions (Ar ϩ ,O ϩ ,O 2 ϩ ) are generally accelerated towards the target and do not bombard the growing film.…”

Section: Dependence Of the Strain On Deposition Parametersmentioning

confidence: 99%

Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films

Kappertz

Drese

Wuttig

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

101

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Zinc oxide-based transparent conductive oxide films prepared by pulsed magnetron sputtering from powder targets: Process features and film properties Stress evolution during growth in direct-current-sputtered zinc oxide films at various oxygen flows J. Appl. Phys. 98, 073514 (2005); 10.1063/1.2061888In situ measurement of mechanical stress in polycrystalline zinc-oxide thin films prepared by magnetron sputtering Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties

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Characterization of a magnetron sputtering discharge with simultaneous RF- and DC-excitation of the plasma for the deposition of transparent and conductive ZnO:Al-films

Cited by 23 publications

References 7 publications

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films

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