Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

Bahir, G.; Garber, V.; Dust, A.

doi:10.1007/bf02665859

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…Several groups have implemented such structure through ion implantation, diffusion, or ion milling on HgCdTe and InAlGaAs/InAlAs superlattice materials. [39][40][41][42][43] A recent study considered Zn diffusion behavior in GaSb for the purpose of fabricating planar P on N antimonide superlattice detectors. 44 Researchers have also studied ways to minimize spatial cross talk and blooming effects, such as using guard rings created by a small doped region between pixels for HgCdTe detectors.…”

Section: Technical Challenges and Potential Solutionsmentioning

confidence: 99%

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

et al. 2010

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The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs.Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V industry resources and taking advantage of years of valuable experiences amassed by the HgCdTe FPA industry. By end of the program span, three sets of FPAs will be demonstrated-a small-format long-wave FPA, a large-format long-wave FPA, and a medium-format dual-band FPA at long-wave and mid-wave infrared.

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Section: Technical Challenges and Potential Solutionsmentioning

confidence: 99%

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

et al. 2010

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Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

Pociask

Іжнін²,

Mynbaev

et al. 2010

Thin Solid Films

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Investigation of laser beam-induced current techniques for heterojunction photodiode characterization

Redfern

Fang

Bahir

et al. 2005

Journal of Applied Physics

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A reduced model is developed that has significant advantages over the full drift-diffusion model for the simulation of laser beam-induced current ͑LBIC͒ signals in the presence of heterojunctions. The model determines the contribution to the LBIC signal that would occur from photogeneration at any position within the semiconductor, and is particularly useful for heterostructures where judicious choice of illumination wavelength can result in photogeneration at different depths within the device structure. The reduced model is used to examine the basic features of LBIC as applied to two types of planar P-n HgCdTe heterojunction photodiode structures. In particular, the question of correctly identifying erroneous device structures formed during the fabrication process is addressed, and experimental measurements are presented to support the simulation results.

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Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

Cited by 4 publications

References 16 publications

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

Investigation of laser beam-induced current techniques for heterojunction photodiode characterization

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