Characterization of a new sensing device based on hydrocarbon groups (CHx) coated porous silicon

Cheraga, H.; Belhousse, S.; Gabouze, N.

doi:10.1016/j.apsusc.2004.05.249

Cited by 15 publications

(10 citation statements)

References 5 publications

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“…When the gas is removed, the current recovers rapidly and completely to the initial value. A Nano exponential decrease of the current is observed [25]. There are several approaches to explain the variation of the current.…”

Section: Electrical Properties (Current-voltage Characteristics)mentioning

confidence: 99%

Electrical Properties of Porous Silicon for N2 Gas Sensor

Bahar¹,

Eskandari²,

Shaban³

2017

J Theor Comput Sci

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The application of porous silicon (PSi) for gas sensing devices has gained a considerable attention in the last decade. This work considers the electrical features of PSi layers prepared by electrochemical etching. We find that in order to get a better understanding of the absorption properties of PSi surface, it is necessary to know how the PSi morphology depends on the etching parameters. The physical structure of PSi, i.e., porosity, and pore size distribution can be controlled by changing the Hydrofluoric Acid concentration, current density, anodizing length and etching time in anodizing procedure. We describe our test system for gas sensors and investigate on the electrical behavior of PSi layers (p-type) in N 2 gas for various fabrication conditions. The results show that the current density increases significantly as N 2 gas is adsorbed. The measurements of the I-V characteristics were carried out at atmospheric pressure, room temperature, and with N 2 gas as well.

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Section: Electrical Properties (Current-voltage Characteristics)mentioning

confidence: 99%

Electrical Properties of Porous Silicon for N2 Gas Sensor

Bahar¹,

Eskandari²,

Shaban³

2017

J Theor Comput Sci

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“…Very recently, another very promising material for selfassembled substrates and an optimum candidate for the Nb growth was proposed, namely, porous silicon (PS) [18]. PS is constituted by a network of pores immersed in a nanocrystalline matrix [19] and it is a material which offers a considerable technological interest in different fields, as for instance micro and optoelectronics [20] and gas sensing [21,22]. The diameter of pores, Ø, in PS can easily be varied from 200 nm down to 5 nm by using substrates with appropriate doping (n or p) and different regimes of anodization.…”

mentioning

confidence: 99%

Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon

Trezza¹,

Cirillo²,

Prischepa³

et al. 2009

Europhys. Lett.

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Abstract. -Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.

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“…To date, we have produced a highly sensitive, rapidly responding room temperature device based upon a CH x /porous silicon interface to detect gaseous hydrocarbons, CO 2 and H 2 [12,13]. However, it was shown that the sensor is not sensible to oxygen environment.…”

Section: Resultsmentioning

confidence: 99%

Gas sensitive porous silicon sensor using rapid thermal annealing screen printing contacts

Mahmoudi

Gabouze

Haddadi

et al. 2007

Phys. Status Solidi (c)

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The development of sensitive porous silicon (PS) gas sensor which utilizes screen printing for the front and back contacts metallization has been reported. Application of the thick-film technology results in highly reproducible and economic fabrication of the contacts. We present the design, fabrication, characterization and results when devices were submitted to different gases as opposed to a controlled environment such as vacuum. The C-V and I-V measurements performed on metal/CH x /porous silicon/silicon structure showed that the electrical properties of the device are extraordinary sensitive to various gases, oxygen, propane, carbon dioxide at disproportionate level. The response of this device, which operates at bias voltages of 10 -100 mV, is rapid and reversible. The electrically operated sensor is more sensitive to oxygen and shows an opposite behaviour if exposed to a reducing environment.

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Characterization of a new sensing device based on hydrocarbon groups (CHx) coated porous silicon

Cited by 15 publications

References 5 publications

Electrical Properties of Porous Silicon for N2 Gas Sensor

Electrical Properties of Porous Silicon for N2 Gas Sensor

Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon

Gas sensitive porous silicon sensor using rapid thermal annealing screen printing contacts

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