2000
DOI: 10.1016/s0040-6090(00)01266-9
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Characterization of a silicon carbide thin layer prepared by a self-propagating high temperature synthesis reaction

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Cited by 6 publications
(3 citation statements)
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“…This is because after HT the graphitization degree of the PyC in samples CT1–CT4 increases, which reduces the diffusion rate of carbon in the PyC layer. So the subsequent silicon–carbon reaction rate decreases relatively, resulting in reduced SiC formation 34 . Typical Raman spectra of the PyC before and after HT are shown in Figure 6.…”
Section: Resultsmentioning
confidence: 99%
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“…This is because after HT the graphitization degree of the PyC in samples CT1–CT4 increases, which reduces the diffusion rate of carbon in the PyC layer. So the subsequent silicon–carbon reaction rate decreases relatively, resulting in reduced SiC formation 34 . Typical Raman spectra of the PyC before and after HT are shown in Figure 6.…”
Section: Resultsmentioning
confidence: 99%
“…This is because after HT the graphitization So the subsequent silicon-carbon reaction rate decreases relatively, resulting in reduced SiC formation. 34 Typical Raman spectra of the PyC before and after HT are shown in Figure 6. The graphitization degree can be characterized by the intensity ratio (denoted as R −1 ) of the D-band (∼1360 cm −1 ) to the G-band (∼1580 cm −1 ).…”
Section: Effect Of Bulk Density and Heat Treatment Of C/c Preforms On...mentioning
confidence: 99%
“…To study the force and heat of the rudderpost, 1#, 2# and 3# rudderpost samples were prepared, and the test parts installation is shown in Figure 1 [4].…”
Section: Problem Descriptionmentioning
confidence: 99%