Characterization of a Turbo-Switch SOA Wavelength Converter Using Spectrographic Pulse Measurement

Reid, Douglas A.; Clarke, A.M.; Yang, Xuelin; Maher, Robert; Webb, R.P.; Manning, R.J.; Barry, Liam P.

doi:10.1109/jstqe.2008.919742

Cited by 13 publications

(3 citation statements)

References 19 publications

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“…All these techniques have been proposed to enable the SOA implementation on-chip for different applications. SOAs can operate either in the linear regime, as reach-extender amplifiers in gigabit passive optical networks (GPON) [26], or in the nonlinear regime, as an all-optical switching [27,28]. SOA-based chip-level applications are not limited to optical communication systems but also include medical sensors, industrial and environmental monitoring [29], and nonlinear optics [30].…”

Section: Introductionmentioning

confidence: 99%

SOA Model and Design Guidelines in Lossless Photonic Subsystem

Goki¹,

Tufano²,

Cavaliere³

et al. 2022

New Advances in Semiconductors

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We propose a new practical analytical model to calculate the performance of amplitude-modulated systems, including semiconductor optical amplifiers (SOA). Lower and upper-performance bounds are given in terms of signal quality factor (Q) concerning the input signal pattern. The target is to provide a design tool for gain elements included in photonic integrated circuits (PIC) to compensate for their insertion loss. This subject is a critical issue, for example, in the arrays of optical transmitters with silicon photonics modulators used for interconnection applications. Due to implementation limitations, the design of an SOA embedded in a PIC is considerably different with respect to the use of SOAs as line amplifiers in optical networks. SOA amplified spontaneous emission (ASE) and gain saturation effects have been included in the model, together with the input signal extinction ratio and the receiver electrical filter. Each degradation effect provides its own contribution to the signal integrity in terms of signal-to-noise ratio (SNR) or inter-symbol interference (ISI). The model shows that the SOA operation at low extinction ratios, typical in optical interconnect applications, is substantially different from the operation at higher extinction ratios used in transport networks. The model is validated through numerical simulations and experiments. Finally, two examples are provided for dimensioning a PIC system and optimizing the SOA parameters.

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Section: Introductionmentioning

confidence: 99%

SOA Model and Design Guidelines in Lossless Photonic Subsystem

Goki¹,

Tufano²,

Cavaliere³

et al. 2022

New Advances in Semiconductors

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show abstract

“…Therefore, it is quite important to quantitively characterize the property of an active nonlinear device to utilize it in an optical signal processing. Optical nonlinear devices, such as highly nonlinear fiber (HNLF) and semiconductor optical amplifier (SOA), have been widely used in many kinds of optical signal processing, e.g., all-optical (AO) wavelength conversion [6][7][8][9][10], AO logic gate [11][12][13][14][15], AO flip-flop [16][17][18], AO switch [19][20][21], optical analog-to-digital conversion [22,23], and so on. Many of them utilize the nonlinear intensity and/or phase change in time domain signal, so called self-phase modulation (SPM), cross-phase modulation (XPM), and cross-gain modulation (XGM).…”

Section: Introductionmentioning

confidence: 99%

Investigation of amplitude and phase evolution of a short-pulse propagating through a gain saturated semiconductor optical amplifier

Shimizu

2022

IEICE Electron. Express

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We have experimentally investigated the amplitude and phase evolution of a short-pulse propagating through a semiconductor optical amplifier (SOA), by using a spectral retrieving technique. A short-pulse with 20-ps pulse width, which had comb-shaped spectrum, was input to the SOA with gain saturated condition. The amplitude and phase of the output signals were observed by synthesizing the fragments of sliced spectrum which were individually observed by a coherent optical receiver. The phase rotation in time and frequency domain were successfully observed, as well as the amplitude evolution. The gain saturation and nonlinear effect in the SOA induced strong amplitude and phase evolution of spectral comb components as well as generating new frequency components. The experimental results characterized the amplitude and phase evolution of a short-pulse propagating through the SOA.

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“…All these models proposed to optimize the operating conditions and improve SOA design, either stand-alone or on chip, for different applications. Depending on the application, SOAs are operated either in linear regime, as in-line amplifiers in optical communication networks [20,21] or in nonlinear regime, as all optical logic gates [22], all-optical switching [23] and wavelength conversion [24]. SOA performance has been investigated in terms of input signal with different modulation formats, different input pulse shapes [25,26] and nonlinear pulse propagation [27].…”

Section: Introductionmentioning

confidence: 99%

Lossless WDM PON Photonic Integrated Receivers Including SOAs

et al. 2019

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The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

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Characterization of a Turbo-Switch SOA Wavelength Converter Using Spectrographic Pulse Measurement

Cited by 13 publications

References 19 publications

SOA Model and Design Guidelines in Lossless Photonic Subsystem

SOA Model and Design Guidelines in Lossless Photonic Subsystem

Investigation of amplitude and phase evolution of a short-pulse propagating through a gain saturated semiconductor optical amplifier

Lossless WDM PON Photonic Integrated Receivers Including SOAs

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