Characterization of Ag-doped ZnO thin film for its potential applications in optoelectronic devices

Xu, Linhua; Miao, Jinshui; Chen, Yulin; Su, Jing; Yang, Mingzhu; Zhang, Lei; Zhao, Lilong; Ding, Shuchen

doi:10.1016/j.ijleo.2018.06.016

Cited by 49 publications

(20 citation statements)

References 33 publications

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“…Figure2displays the structure and crystallinity of undoped ZnO and Ag-doped ZnO thin films using XRD (20 • ≤ 2 θ ≤ 80 • ). The results showed polycrystalline with a hexagonal wurtzite structure for the Ag-doped sample[36]. The diffraction peaks corresponding to…”

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confidence: 93%

Development of Ag-Doped ZnO Thin Films and Thermoluminescence (TLD) Characteristics for Radiation Technology

et al. 2022

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This work examined the thermoluminescence dosimetry characteristics of Ag-doped ZnO thin films. The hydrothermal method was employed to synthesize Ag-doped ZnO thin films with variant molarity of Ag (0, 0.5, 1.0, 3.0, and 5.0 mol%). The structure, morphology, and optical characteristics were investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDX), photoluminescence (PL), and UV–vis spectrophotometers. The thermoluminescence characteristics were examined by exposing the samples to X-ray radiation. It was obtained that the highest TL intensity for Ag-doped ZnO thin films appeared to correspond to 0.5 mol% of Ag, when the films were exposed to X-ray radiation. The results further showed that the glow curve has a single peak at 240–325 °C, with its maximum at 270 °C, which corresponded to the heating rate of 5 °C/s. The results of the annealing procedures showed the best TL response was found at 400 °C and 30 min. The dose–response revealed a good linear up to 4 Gy. The proposed sensitivity was 1.8 times higher than the TLD 100 chips. The thermal fading was recorded at 8% for 1 Gy and 20% for 4 Gy in the first hour. After 45 days of irradiation, the signal loss was recorded at 32% and 40% for the cases of 1 Gy and 4 Gy, respectively. The obtained optical fading results confirmed that all samples’ stored signals were affected by the exposure to sunlight, which decreased up to 70% after 6 h. This new dosimeter exhibits good properties for radiation measurement, given its overgrowth (in terms of the glow curve) within 30 s (similar to the TLD 100 case), simple annealing procedure, and high sensitivity (two times that of the TLD 100).

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confidence: 93%

Development of Ag-Doped ZnO Thin Films and Thermoluminescence (TLD) Characteristics for Radiation Technology

et al. 2022

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“…17 However, ZnONRs have never been a suitable material for broadband detection due to several problems, especially the large band gap of 3.3 eV, which means that devices based on this material can operate only in the UV region that accounts for only 4% in the solar spectrum. [18][19][20] Therefore, modifying ZnONRs to improve their optical properties has become the interest of research for many years. 21,22 For years, scientists have sought for solutions to overcome the limitations of ZnO's absorption, and several modication methods as doping with transition metals, decorating with noble metals have been intensively surveyed.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Developing low-cost nanohybrids of ZnO nanorods and multi-shaped silver nanoparticles for broadband photodetectors

et al. 2023

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“…Because ZnO simultaneously exhibits semiconducting and piezoelectric properties [11,12], intensive research has been carried out related to its application to diverse electronics, including optoelectronic [13,14] and piezoelectric devices [15,16]. Piezoelectricity in a ZnO nanorod was discovered for the first time using conductive atomic force microscopy (C-AFM) [17].…”

Section: Introductionmentioning

confidence: 99%

Dependency of Conductive Atomic Force Microscopy and Lateral Force Microscopy Signals on Scan Parameters for Zinc Oxide Nanorods

Yang¹,

Kim²

2022

Korean J. Met. Mater.

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Conductive atomic force microscopy (C-AFM) is one of the most commonly used characterization techniques for piezoelectric one-dimensional nanomaterials. However, a comprehensive understanding of the effects of certain scan parameters on the C-AFM signals remains elusive. In the present work, the dependency of C-AFM signals on the normal force, scan speed, and Z scanner feedback gain was studied in conjunction with lateral force microscopy (LFM) signals. As the normal force increased, the C-AFM and the LFM signals increased for the following two possible reasons. When larger normal force was applied, ZnO nanorods were more effectively deflected, intensifying the piezoelectric effect. Additionally, the triboelectric effect was enhanced via the increased force of friction between the AFM tip and the ZnO nanorods. When the scan speed increased to 0.5 Hz, the LFM signals and the C-AFM signals increased owing to the enhanced degree of deflection in the ZnO nanorods. However, when exceeding 0.5 Hz, both the LFM signals and the C-AFM signals started to decrease because the AFM tip did not come into contact with the short ZnO nanorods at a high scan speed. Finally, with an increase in the feedback gain to 0.5, both the LFM signals and the C-AFM signals increased. However, when the feedback gain exceeded 1.0, the Z scanner feedback loop was too sensitive to deflect the ZnO nanorod, considerably reducing the total LFM signals. In contrast, the total C-AFM signal showed only a moderate decrease.

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Characterization of Ag-doped ZnO thin film for its potential applications in optoelectronic devices

Cited by 49 publications

References 33 publications

Development of Ag-Doped ZnO Thin Films and Thermoluminescence (TLD) Characteristics for Radiation Technology

Development of Ag-Doped ZnO Thin Films and Thermoluminescence (TLD) Characteristics for Radiation Technology

Developing low-cost nanohybrids of ZnO nanorods and multi-shaped silver nanoparticles for broadband photodetectors

Dependency of Conductive Atomic Force Microscopy and Lateral Force Microscopy Signals on Scan Parameters for Zinc Oxide Nanorods

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