Characterization of (Al)GaAs/AlAs distributed Bragg mirrors grown by MBE and LP MOVPE techniques

Jasik, A.; Gaca, J.; Wójcik, M.; Muszalski, J.; Pierściński, Kamil; Mazur, K.; Kosmala, Monika; Bugajski, M.

doi:10.1016/j.jcrysgro.2008.06.035

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Cited by 4 publications

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“…The more uniform temperature distribution through the more uniform molecules incorporation improves quality of crystal in consequence of lower point and extended defect density. The influence of the rotation rate on the crystal quality is unquestionable in case of the MOCVD technique, but in case of MBE has been neglected up to now [6,7]. It is known that the defects favour the liberation of the energy cumulated in the strained material.…”

Section: Results Und Discussionmentioning

confidence: 99%