Characterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers

Yıldırım, Murat; Koçyiğit, Adem

doi:10.1016/j.jallcom.2018.07.295

Cited by 76 publications

(24 citation statements)

References 59 publications

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“…The photodiode property of the Au/CuCo 2 S 4 /p-Si device is based on the increasing carriers in the interface of the metalsemiconductor junction by light intensity. 19 Normally, CuCo 2 S 4 has a 1.41 eV band gap and can easily absorb the solar spectrum. 13 In this case, the…”

Section: Resultsmentioning

confidence: 99%

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Yıldırım

Koçyiğit

Sarılmaz

et al. 2019

Journal of Elec Materi

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Ternary-structured thiospinels have attracted great attention in recent years for energy applications due to their attractive characteristics such as simple production, earth-abundant components and non-toxic nature. In this work, copper cobalt sulfide (CuCo 2 S 4 or carrollite) thiospinel nanocrystals were synthesized by a hot-injection method, and detailed electrical and optoelectronic characterizations were performed in a Schottky device. The synthesized nanocrystals were used as an interfacial layer between the Au metal and p-Si semiconductor to obtain an Au/CuCo 2 S 4 /p-Si device. The structural and morphological characterizations confirmed the crystallinity, nanostructure and composition of the CuCo 2 S 4 nanocrystals. The I-V and C-V measurements were employed to characterize the Au/CuCo 2 S 4 /p-Si device for various illumination intensities. The obtained device exhibited good rectifying and photodiode properties as well as good photocapacitance. The Au/CuCo 2 S 4 /p-Si device can be used and improved for optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Yıldırım

Koçyiğit

Sarılmaz

et al. 2019

Journal of Elec Materi

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“…According to Fig. 8a, the Au/T-CuSbS 2 /p-Si (13) I ph = P m and Au/S-CuSbS 2 /p-Si devices have linear behavior with increasing light intensity and can be performed as photodetector applications [51]. Figure 8b exhibits photoresponse graph of the Au/T-CuSbS 2 /p-Si and Au/S-CuSbS 2 /p-Si devices.…”

Section: Andmentioning

confidence: 97%

The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

Yıldırım

Koçyiğit

Sarılmaz

et al. 2018

J Mater Sci: Mater Electron

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CuSbS 2 (Chalcostibite) crystals were synthesized by the hot-injection method as triangular and spherical shaped structures. The crystals were inserted by spin coating technique as interfacial layers between Au metal and p-Si to investigate their electrical and photoresponse properties via I-V measurements under various light intensities. The XRD measurements were performed to show the crystalline structure of the spherical and triangular CuSbS 2. The TEM images confirmed the triangular and spherical particle structures of the CuSbS 2 crystals. The I-V measurements were performed under dark, 20-100 mW light intensities with 20 mW interval for spherical and triangular CuSbS 2 photodiodes. In addition, diode parameters were extracted and discussed in the details. The results highlighted that triangular and spherical shaped structures have good photoresponse to the illumination and can be employed in the photodiode and photodetector applications.

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“…Yildirim et al. makes a Al/ZnO/p‐Si stratified structure where the ZnO layers are In doped with different concentration . It is noticeable that the surface morphology changes a lot after doping.…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Characterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers

Cited by 76 publications

References 59 publications

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

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