The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

Abstract

CuSbS 2 (Chalcostibite) crystals were synthesized by the hot-injection method as triangular and spherical shaped structures. The crystals were inserted by spin coating technique as interfacial layers between Au metal and p-Si to investigate their electrical and photoresponse properties via I-V measurements under various light intensities. The XRD measurements were performed to show the crystalline structure of the spherical and triangular CuSbS 2. The TEM images confirmed the triangular and spherical particle structures of the CuSbS 2 crystals. The I-V measurements were performed under dark, 20-100 mW light intensities with 20 mW interval for spherical and triangular CuSbS 2 photodiodes. In addition, diode parameters were extracted and discussed in the details. The results highlighted that triangular and spherical shaped structures have good photoresponse to the illumination and can be employed in the photodiode and photodetector applications.

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

“…Light generally causes increasing of carriers in the interface of the MS devices, and this induces an increase in the current at reverse biases [72,73]. Here, the increasing light illumination generated charge carriers in the interface of the various PCBM doped Al/PCBM:ZnO/p-Si devices, and current at reverse biases increased for all devices with increasing light illumination intensity.…”

Ultrafast and broadband photodetection based on selenized AgSbS2 thin films prepared by spray pyrolysis deposition and modified with indium nitrate

“…12 Nanocrystalline detectors based on ternary antimony disulde (including CuSbS 2 and AgSbS 2 ) prepared on a silicon substrate usually exhibit A/W-level responsivity with very high detectivity, attributed to the good photodiode behavior and a high rectifying ratio. 13,14 Nonetheless, the performance is always constrained by the synthesis technology of narrow-bandgap nanocrystals, as well as the stability of nanomaterials. Conjugated polymer infrared PDs have also demonstrated a relatively wide detection range up to 1500 nm, high detectivity exceeding 10 10 Jones, and micrometer-scale response times.…”