Synthesize and characterization of Co-complex as interlayer for Schottky type photodiode

Koçyiğit, Adem; Yıldırım, Murat; Köse, Dursun Ali; Yıldız, D. E.

doi:10.1007/s00289-021-04021-0

Cited by 18 publications

(3 citation statements)

References 56 publications

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“…Metal-semiconductor (MS) contacts used in semiconductor device technology are preferred in many optoelectronic applications such as electronic circuit elements [1], solar cells [2], semiconductor photodetectors [3], photodiodes [4], and ultraviolet light-emitting diodes (UV-LEDs) [5]. When an oxide layer is produced, these structures can be converted into metal-insulator-semiconductor (MIS) or metal-oxide-semiconductor (MOS) structures depending on the thickness of the interface grown between the MS structures.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Çağırtekin,

Ajjaq,

Barin

et al. 2023

Phys. Scr.

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In this study, the effect of coating p-Si substrates with a pure ZnO layer using the hydrothermal reaction method on the dielectric parameters was reported. The studied dielectric properties of the ZnO/p-Si structure include dielectric constant (ε′), dielectric loss (ε″), ac electrical conductivity (σ AC), and real and imaginary electrical modulus (M′, M″). These properties were investigated using experimental capacitance-frequency (C-f) and conductivity-frequency (G-f) measurements in a frequency range of 20 Hz-1 MHz and a temperature range of 300-420 K. Experimental results show that dielectric parameters are strongly frequency- and temperature-dependent. The dielectric constant showed an increase of about 11 times in the investigated temperature range. At the same time, AC electrical conductivity increased with increasing frequency and temperature. In addition, the electrical modulus was examined, and peaks were observed in M″ values. It was observed that the peaks shifted to the high-frequency region with the increase in temperature. The activation energies were also calculated from the conductivity parameters and a decrease was observed in the activation energies as the frequency increased. Regardless of temperature and frequency, the higher dielectric loss of the fabricated diode compared to its dielectric constant can be advantageous for certain heating or electromagnetic absorption applications.

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Section: Introductionmentioning

confidence: 99%

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Çağırtekin,

Ajjaq,

Barin

et al. 2023

Phys. Scr.

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“…Co and Mn metal centered nicotinamide/nicotinic acid complexes were studied for photodetector applications and results revealed good detector performance. [52][53][54] To enhance the electrical behaviors of MS devices in photodetector applications, the metal-complex structures can be used as an interfacial layer. Therefore, in this study, the Cd-and Co-complexes were synthesized chemically and employed as an interfacial layer for Al metal and p-Si semiconductor contact to obtain efficient photodiode or photodetector devices.…”

Section: Introductionmentioning

confidence: 99%

“…Co and Mn metal centered nicotinamide/nicotinic acid complexes were studied for photodetector applications and results revealed good detector performance. [ 52–54 ]…”

Section: Introductionmentioning

confidence: 99%

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

Koçyiğit

Hussaini

Yıldırım

et al. 2022

Applied Organom Chemis

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Cd and Co metal centered nicotinamide/nicotinic acid complexes were synthesized by chemical reactions. The complexes were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT‐IR), powder X‐ray diffractometer (P‐XRD), ultraviolet–visible (UV–Vis) spectrometer, and scanning electron microscopy (SEM) with energy dispersive X‐ray (EDX) detector. The complexes were used as interfacial layers in between Al and p‐Si to fabricate Al/Cd‐complex/p‐Si and Al/Co‐complex/p‐Si metal semiconductor devices. The devices were characterized by current–voltage (I‐V) and current‐time (I‐t) measurements under dark and various light power intensities. The ideality factor, barrier height, and series resistance values were extracted from I‐V measurements and discussed in detail by various techniques. The I‐t measurements were used to derive various detector parameters such as responsivity, photosensitivity, and specific detectivity for various power values and wavelength regions. The devices exhibited good photodiode and photodetector performance according to results, and they can be improved for optoelectronic applications.

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The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

et al. 2023

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Synthesize and characterization of Co-complex as interlayer for Schottky type photodiode

Cited by 18 publications

References 56 publications

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

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