The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

Elamen, Hasan; Badalı, Yosef; Ulusoy, Murat; Azizian‐Kalandaragh, Yashar; Altındal, Ş.; Guneser, Muhammet Tahir

doi:10.1007/s00289-023-04725-5

Cited by 15 publications

(8 citation statements)

References 53 publications

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“…the relationship between Φ B0 and n is almost linear, as seen in the fitting equation of Φ B0 = (−0.0997n+0.9559) eV. The generation-recombination of e-h+ couples under illumination, shortening the depletion zone width, boosting light intensities, and N SS effects could all produce these occurrences [23,27,28].…”

Section: = -F *mentioning

confidence: 80%

“…More electron-hole pairs are rapidly produced at the junction when SBDs, photodiodes, and SCs are subjected to radiation with energy (h.c. /q  l Eg) [3,27]. When there is an electric field, these electrons are quickly swept from the insulator or polymer interlayer, increasing I ph , especially around the reverse bias region, as the direction of the internal and external electric fields is the same, and thus form a strong electric field throughout the entire system [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

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Section: = -F *mentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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“…and even cationand anion-bonded materials. 27,28 The physicochemical interactions underlying the preference of polymers and/or doped polymers as active medium/ interface in photovoltaic devices are basically based on the photogeneration of e − −h + couples depending on the energy irradiated onto the surface of the device. 29,30 In addition, there are studies that include polymer and copolymer compositions in such device applications, albeit in very limited numbers.…”

Section: Introductionmentioning

confidence: 99%

“…Polymers have been used as interfaces in such studies in their pristine form or by doping with various filling nanostructures (metals, metal oxides, graphene, GO, etc.) and even cation- and anion-bonded materials. , …”

Section: Introductionmentioning

confidence: 99%

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

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“…Also global demand has risen by about 3.2%/year to 2021. PVC due to advantages such as high flexibility, suitable thermal and mechanical strength, cheap preparation, strong resistance to chemicals, weather conditions, sunlight and water oxidation is used in various industries such as the construction industry (construction, pipe domestic sanitary wastewater), petrochemicals, a wide range of paints and finishes (wood veneer) have been used [12][13][14] Various factors greatly influence the performance and operational capabilities of SBDs. These factors include the preparation of the surface, the level of doping, the consistency of barrier heights, and the existence of an interface layer, which is crucial in determining how well SBDs will function and the range within which they can operate [15,16].…”

Section: Introductionmentioning

confidence: 99%

Characterization of the electrical properties of MPS schottky structures incorporating Fe doped polyvinyl chloride (PVC)

Badali

2023

Phys. Scr.

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This paper explores the effects of the organic interfacial layer on the electrophysical characteristics of Schottky barrier diodes (SBDs). Three types of SBDs were fabricated: Au-Si (referred to as MS), Au/PVC/Si (referred to as MPS1), and Au-/PVC:Fe/Si (referred to as MPS2). Fe nanopowders were subjected to analysis using XRD, SEM, and EDX techniques to investigate their structural and optical characteristics. To investigate the conduction mechanisms of these diodes, I-V characteristics were examined using thermionic-emission (TE), Cheung, and Norde functions. The surface-state density (N ss ) distribution of energy was determined by analyzing the current–voltage (IF-VF) curve under forward bias conditions. This analysis considered the voltage-dependent barrier height (BH) and ideality factor (n(V)). The results demonstrated that the polymeric interlayer without Fe nanoparticles reduced N ss by a factor of 7, while the presence of Fe nanoparticles led to a two-order magnitude decrease, resulting in improved efficiency in comparison with MS structures. The obtained results indicated that including a polymeric layer in MPS structure enhanced their electrophysical features compared to MS diodes, and significantly increased rectification by 15–45 times. In summary, the existence of an organic interfacial layer significantly altered the conduction mechanisms and electrophysical characteristics of MPS diodes. It was found that the addition of Fe nanoparticles in the interlayer resulted in substantial improvements in N ss , efficiency, rectification, and conduction characteristics compared to MS diodes.

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The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

Cited by 15 publications

References 53 publications

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Characterization of the electrical properties of MPS schottky structures incorporating Fe doped polyvinyl chloride (PVC)

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The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

Cited by 15 publications

References 53 publications

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Characterization of the electrical properties of MPS schottky structures incorporating Fe doped polyvinyl chloride (PVC)

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)