Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

Lee, K.H.; Chang, Ping-Chuan; Chang, Shoou Jinn; Wang, Y.C.; Yu, Chunyang; Wu, San-Lein

doi:10.1109/jsen.2009.2021190

Cited by 13 publications

(6 citation statements)

References 38 publications

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“…The detectivity (D*), the reciprocal of NEP, is a figure of merit used to characterize the performance of a photodetector. Under a 10 V bias, the calculated NEP of the MoS 2 MSM PDs in this study is 1.1 Â 10 À10 W/cm Hz 1/2 by NEP = P/f 1/2 = (2eJ d ) 1/2 /R, where P is incident optical power, f is frequency bandwidth of the photodetector, R is responsivity, e is electronic charge, and J d is dark current density, leading to a D* of ∼10 10 cm Hz 1/2 / W. 42,43 To compare with commercially available AlGaNbased PDs (2.65 Â 10 10 cm Hz 1/2 /W) and Si-based PDs (∼10 12 cm Hz 1/2 /W) reported previously, 44,45 the detectivity of few-layer MoS 2 MSM PDs should be further improved via reducing the dark current and increasing the responsivity.…”

Section: Resultsmentioning

confidence: 99%

Few-Layer MoS₂ with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

et al. 2013

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Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.

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Section: Resultsmentioning

confidence: 99%

Few-Layer MoS₂ with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

et al. 2013

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“…Significant development of III-nitride based wide bandgap materials has led to the applications in microelectronics and optoelectronic device [1][2][3][4][5][6]. High hole conductivity in AlGaN is the key for producing short-wavelength optical devices as well as high-power and high-frequency electronic devices.…”

Section: Introductionmentioning

confidence: 99%

High Conductivity of Mg-Doped Al_0.3Ga_0.7N with Al_0.4Ga_0.6N/AlN Superlattice Structure

Jiang

et al. 2014

Advances in Condensed Matter Physics

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The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.

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“…The 3 orders of magnitude smaller dark current measured from PD_A should also be attributed to the reduced number of TDs in the epitaxial layers. 25 Figure 5 shows transient response measured from PD_A with À 5 V applied bias, as we switched the UV excitation on and off. It was found that photocurrent increased and decreased rapidly as we turned on and off the UV excitation.…”

Section: Resultsmentioning

confidence: 99%

“…Instead of LT GaN, Lee et al reported the fabrication of GaN UV PDs with a LT Al 0.3 Ga 0.7 N intermediate layer. 25 With a larger bandgap energy, below bandgap absorption of the LT Al 0.3 Ga 0.7 N interlayer is much less significant in the visible region. The lattice constant of Al 0.3 Ga 0.7 N, however, is much larger than that of GaN.…”

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confidence: 99%

GaN MSM UV Photodetectors with an Al0.82In0.18N Intermediate Layer

Huang

Weng

Chang

et al. 2011

J. Electrochem. Soc.

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GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With − 5 V applied, noise equivalent power and detectivity obtained were 1.47 × 10−13 W and 4.95 × 1012 cm Hz0.5 W−1, respectively, for the PDs with the AlInN intermediate layer.

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Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

Cited by 13 publications

References 38 publications

Few-Layer MoS₂ with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

Few-Layer MoS₂ with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

High Conductivity of Mg-Doped Al_0.3Ga_0.7N with Al_0.4Ga_0.6N/AlN Superlattice Structure

GaN MSM UV Photodetectors with an Al0.82In0.18N Intermediate Layer

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Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

Cited by 13 publications

References 38 publications

Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure

GaN MSM UV Photodetectors with an Al0.82In0.18N Intermediate Layer

Contact Info

Product

Resources

About

Few-Layer MoS₂ with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

Few-Layer MoS₂ with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

High Conductivity of Mg-Doped Al_0.3Ga_0.7N with Al_0.4Ga_0.6N/AlN Superlattice Structure