Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy

Hong, Soon Ku; Paek, Mun Cheol; Han, Gee-Pyeong; Sohn, Y.U.; Kim, Tae-Youb; Cho, Kyoung-Ik; Shim, Kyu–Hwan; Yoon, Soon‐Gil

doi:10.1143/jjap.41.5507

Cited by 8 publications

(8 citation statements)

References 1 publication

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“…AlN thin films are thus widely found in many commercial products such as surface acoustic wave devices, 1 buried dielectric layers in future silicon-on-insulator, 2 thin buffer layers for GaN epitaxial growth, 3 hard films, optical films, etc. Synthesis of AlN films can be carried out using a number of techniques including plasma-enhanced chemical vapor deposition, 4 metalorganic chemical vapor deposition, 5,6 pulsed laser deposition ͑PLD͒, 7,8 ion-beam assisted deposition, 9 molecular beam epitaxy ͑MBE͒, [10][11][12] and magnetron sputter deposition. 13 Metal plasma immersion ion implantation-deposition ͑Me-PIIID͒, a hybrid process combining cathodic arc deposition and plasma immersion ion implantation, is a surface modification technology.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Shen

Chu

2004

Review of Scientific Instruments

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Articles you may be interested inCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition J. Vac. Sci. Technol. A 31, 01A114 (2013); 10.1116/1.4764112 Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication Rev. Sci. Instrum. 79, 023306 (2008); 10.1063/1.2870088Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique Characteristics and anticoagulation behavior of polyethylene terephthalate modified by C 2 H 2 plasma immersion ion implantation-deposition J.Aluminum nitride ͑AlN͒ is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers ͑100͒ by metal plasma immersion ion implantation and deposition ͑PIIID͒ using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800°C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas.

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Section: Introductionmentioning

confidence: 99%

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Shen

Chu

2004

Review of Scientific Instruments

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“…These are vital for improving the performance of devices on Si. To date, high-quality group III-nitride thin films have been achieved on Si substrates by PLD [147,[154][155][156][157][158][159][160][161][162][163][164]. (111) substrates at various temperatures ranging from 300 to 750 1C [165].…”

Section: Group Iii-nitride Films On Cu Substrates By Pldmentioning

confidence: 99%

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

130

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“…Among wide bandgap semiconductor materials, such as GaN, AlN, and AlGaN, only aluminum nitride-based UV-light-emitting diodes (LEDs) have potential applications for killing water-borne bacteria. In the past decade, various techniques were employed to produce aluminum nitride (AlN) thin films and nanostructures [10][11][12], such as pulsed laser deposition [13], molecular beam epitaxy [14], and the common deposition process DC reactive magnetron sputtering [15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

et al. 2020

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Aluminum nitride nanoparticles (AlN-NPs) were fabricated by a RF magnetron sputtering and inert gas condensation technique. By keeping the source parameters and sputtering time of 4 h fixed, it was possible to produce AlN-NPs with a size in the range of 2–3 nm. Atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), and UV-visible absorption were used to characterize the obtained AlN-NPs. AFM topography images showed quazi-sphere nanoparticles with a size ranging from 2 to 3 nm. The XRD measurements confirmed the hexagonal wurtzite structure of AlN nanoparticles. Furthermore, the optical band gap was determined by the UV-visible absorption spectroscopy. The Raman spectroscopy results showed vibration transverse-optical modes A1(TO), E1(TO), as well as longitudinal-optical modes E1(LO), A1(LO).

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Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy

Cited by 8 publications

References 1 publication

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

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