2004
DOI: 10.1063/1.1646741
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Abstract: Articles you may be interested inCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition J. Vac. Sci. Technol. A 31, 01A114 (2013); 10.1116/1.4764112 Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication Rev. Sci. Instrum. 79, 023306 (2008); 10.1063/1.2870088Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc techni… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
4
0

Year Published

2005
2005
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 9 publications
(5 citation statements)
references
References 35 publications
1
4
0
Order By: Relevance
“…50 The plasmaized Si reacts with the O 2 gas remaining in the CAPD chamber to generate the Si oxides. 51,52 The presence of SiO 2 is consistent with the diffraction spots observed in the ED pattern, at approximately 3.64 Å. In the Si 2p spectrum, the main peaks are observed at 99.0 and 98.4 eV, which may be assigned to the Si−Si bonds of Si 0 .…”
Section: Structures Of the Si Films Fabricated Via Capdsupporting
confidence: 83%
See 1 more Smart Citation
“…50 The plasmaized Si reacts with the O 2 gas remaining in the CAPD chamber to generate the Si oxides. 51,52 The presence of SiO 2 is consistent with the diffraction spots observed in the ED pattern, at approximately 3.64 Å. In the Si 2p spectrum, the main peaks are observed at 99.0 and 98.4 eV, which may be assigned to the Si−Si bonds of Si 0 .…”
Section: Structures Of the Si Films Fabricated Via Capdsupporting
confidence: 83%
“…56 Si−O is derived from the reaction of plasmaized Si with the O 2 gas remaining in the CAPD chamber. 51,52 The S 1s and P 1s HAXPES peaks observed at 2470.0 and 2148.9 eV, respectively, may be assigned to the PS 4 3− bonds in amorphous Li 3 PS 4 , 35 which corresponds to the Li 3 PS 4 film. Another P 1s peak observed at 2146.5 eV is assigned to the P 2 S 6 4− bonds.…”
Section: Fabrication and Electrochemicalmentioning
confidence: 98%
“…The peak at 611 cm À1 is due to the silicon substrate and two other peaks are related to the Al-N bond, which is very close to the characteristic value of aluminum nitride. [24][25][26] It is obvious from Fig. 2 that there is any structural difference between films A and B however, the intensity of the absorption peak concerning the Al-N bond for sample B is higher than that of sample A owing to the increase in AlN film thickness.…”
Section: Ftir Analysismentioning
confidence: 94%
“…AlN has wide band gap (6.2 eV), high breakdown voltage high thermal conductivity, good acoustic velocity, high dielectric constant (8.5), high hardness, and high wear resistance, which make it suitable for various applications [1,2] , such as optoelectronic devices (especially in the UV region), high power and high temperature applications, surface acoustic wave devices, dielectric alternatives to SiO 2 for MOSFETs, hard films and optical films, etc. Moreover, AlN thin film can be used as a buffer layer to solve the mismatch problems existed in the epitaxial growth of some wide band gap materials on Si or sapphire substrates [3] .…”
Section: Introductionmentioning
confidence: 99%