Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopy

Scheul, Tudor E.; Khorani, Edris; Rahman, Tasmiat; Boden, Stuart A.

doi:10.1063/1.5123858

Cited by 2 publications

(2 citation statements)

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“…This ALD-based method provides excellent conformity, uniformity, crystallinity, and decoupled stoichiometric and layer number control. Following our previous work, we investigate the addition of an interfacial alumina layer to further enhance the quality of subsequent layers . Our large-area industrially scalable and highly controllable hybrid structure approach aims among other applications to provide high-performance electrodes for batteries , to underpin high capacity, long lifetime, and high safety.…”

Section: Introductionmentioning

confidence: 99%

“…Following our previous work, we investigate the addition of an interfacial alumina layer to further enhance the quality of subsequent layers. 40 Our large-area industrially scalable and highly controllable hybrid structure approach aims among other applications to provide high-performance electrodes for batteries 41 , 42 to underpin high capacity, long lifetime, and high safety. Our results include scanning electron microscopy (SEM), TEM, Raman spectroscopy, and photoluminescence to analyze the MoS 2 layer number, quality, uniformity, and interfacial effects of the alumina.…”

Section: Introductionmentioning

confidence: 99%

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Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

Zeimpekis,

Rahman,

Leung

et al. 2024

ACS Appl. Energy Mater.

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transition-metal dichalcogenides have shown great potential for energy storage applications owing to their interlayer spacing, large surface area-to-volume ratio, superior electrical properties, and chemical compatibility. Further, increasing the surface area of such materials can lead to enhanced electrical, chemical, and optical response for energy storage and generation applications. Vertical silicon nanowires (SiNWs), also known as black-Si, are an ideal substrate for 2D material growth to produce high surface-area heterostructures, owing to their ultrahigh aspect ratio. Achieving this using an industrially scalable method paves the way for next-generation energy storage devices, enabling them to enter commercialization. This work demonstrates large surface area, commercially scalable, hybrid MoS 2 /SiNW heterostructures, as confirmed by Raman spectroscopy, with high tunability of the MoS 2 layers down to the monolayer scale and conformal MoS 2 growth, parallel to the silicon nanowires, as verified by transmission electron microscopy (TEM). This has been achieved using a two-step atomic layer deposition (ALD) process, allowing MoS 2 to be grown directly onto the silicon nanowires without any damage to the substrate. The ALD cycle number accurately defines the layer number from monolayer to bulk. Introducing an ALD alumina (Al 2 O 3 ) interface at the MoS 2 / SiNW boundary results in enhanced MoS 2 quality and uniformity, demonstrated by an order of magnitude reduction in the B/A exciton photoluminescence (PL) intensity ratio to 0.3 and a reduction of the corresponding layer number. This high-quality layered growth on alumina can be utilized in applications such as for interfacial layers in high-capacity batteries or for photocathodes for water splitting. The alumina-free 100 ALD cycle heterostructures demonstrated no diminishing quality effects, lending themselves well to applications that require direct electrical contact with silicon and benefit from more layers, such as electrodes for highcapacity ion batteries.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

Zeimpekis,

Rahman,

Leung

et al. 2024

ACS Appl. Energy Mater.

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A new mathematical interpretation of disordered nanoscale material systems for computational modelling

Tyson

Rahman

Boden

2020

Computer Physics Communications

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Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopy

Cited by 2 publications

References 11 publications

Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

A new mathematical interpretation of disordered nanoscale material systems for computational modelling

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Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopy

Cited by 2 publications

References 11 publications

Scalable Large-Area 2D-MoS2/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

Scalable Large-Area 2D-MoS2/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

A new mathematical interpretation of disordered nanoscale material systems for computational modelling

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Product

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Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications

Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications