Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable <i>p</i>-metal-oxide-semiconductor field-effect transistors

Nakajima, Akira; Yoshimoto, Takashi; Kidera, Toshirou; Obata, Katsunori; Yokoyama, Shiyoshi; Sunami, Hideo; Hirose, Masataka

doi:10.1116/1.1387450

Cited by 12 publications

(7 citation statements)

References 19 publications

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“…To form the ALD ZrO 2 /ALD Si-nitride stack structure, an ultrathin Si-nitride barrier layer was deposited using the ALD process, alternately supplying SiCl 4 and NH 3 gases. 14,15 The physical thickness (T phy ) of the barrier ALD Si nitride was about 0.5 nm after two deposition cycles. When the diode structures were formed for electrical measurements, the exposure times of ZTB and H 2 O were both 60 s at 0.04 kPa ͑ZTB͒ and 0.7 kPa (H 2 O) vapor pressures.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, thermal stability of ALD Si nitride has been examined for ALD Si-nitride/SiO 2 stack dielectrics. 15 They were proven to be stable at 800°C for 30 min in a vacuum. Also, p-channel MOS capacitors with the stack dielectrics with 1000°C activation annealing has suppressed boron penetration into the dielectrics, which is due to the existence of the ALD Si nitride on the SiO 2 .…”

Section: ͑2͒mentioning

confidence: 99%

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Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics

Ishii

Nakajima

Yokoyama

2004

Journal of Applied Physics

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Articles you may be interested inStructural and dielectric properties of thin ZrO 2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor Characterization of atomic-layer-deposited silicon nitride / SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistors Atomic-layer-deposited silicon-nitride/SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistorsWe deposited ZrO 2 thin films by atomic-layer deposition ͑ALD͒ using zirconium tertiary-butoxide ͓Zr(t-OC 4 H 9 ) 4 , ͑ZTB͔͒ and H 2 O source gases on Si substrates at low temperatures. We grew ZrO 2 films layer by layer in a temperature range of 175-250°C to minimize surface roughness. The deposited ZrO 2 film thickness had self-limiting properties with the exposure time of ZTB and vapor pressures of ZTB and H 2 O. The deposition rate per cycle was independent of the vapor pressure of ZTB from 0.01 kPa to 0.04 kPa. Transmission electron microscopy revealed that the formation of an SiO x interfacial layer could be suppressed by using an ALD ZrO 2 /ALD Si-nitride ͑ϳ0.5 nm͒ stack structure. We found the fixed charge, interface trap density, and leakage current density in the ALD ZrO 2 /ALD Si-nitride stack dielectrics to be less than those in ALD ZrO 2 dielectrics. In spite of the same equivalent oxide thickness of 1.6 nm, the relative dielectric constant r ͑11.5͒ of the ALD ZrO 2 /ALD Si-nitride stack capacitor was higher than that ͑10.5͒ of the ALD ZrO 2 capacitor due to the suppression of formation of the interfacial SiO x layer ͑1.0-1.5 nm͒ by an ultrathin ALD Si nitride ͑ϳ0.5 nm͒. The current conduction mechanism is identified as direct tunneling of electron except at very low dielectric fields. Comparing structural and electrical properties, ALD ZrO 2 /ALD Si-nitride stack dielectrics are promising candidates for sub-0.1-m metal-oxide-semiconductor field-effect transistors.

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Section: Methodsmentioning

confidence: 99%

Section: ͑2͒mentioning

confidence: 99%

Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics

Ishii

Nakajima

Yokoyama

2004

Journal of Applied Physics

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“…6,9 Recently, in view of film uniformity, thickness control capability in the small thickness region, and low thermal budget, the application of selflimiting atomic-layer deposition ͑ALD͒ is accelerating with apparently significant benefits in the fabrication of various gate dielectrics. [10][11][12][13][14] For the ALD of ZrO 2 gate dielectrics, the alternating exposure of ZrCl 4 and H 2 O gases has most commonly been applied to date. 15,16 However, in the ALD using these source gases, ZrO 2 shows island-like growth when deposited directly on Si.…”

mentioning

confidence: 99%

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

Nakajima

Kidera

Ishii

et al. 2002

Applied Physics Letters

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Growth and electrical properties of atomic-layer deposited ZrO 2 / Si -nitride stack gate dielectrics J. Appl. Phys. 95, 536 (2004); 10.1063/1.1629773Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing ZrO 2 thin films for gate dielectrics have been formed at low temperatures ͑200°C͒ by an atomic-layer deposition ͑ALD͒ technique using Zr(t-OC 4 H 9 ) 4 and H 2 O source gases. An ultrathin ͑physical thickness T phy of ϳ0.5 nm͒ Si nitride layer was deposited on a Si substrate by ALD before the deposition of ZrO 2 . Transmission electron microscopy showed that the Si nitride barrier layer successfully suppressed the formation of a SiO 2 interfacial layer. Because of the extremely uniform thickness control capability in the ultrathin region and the low thermal budget of the ALD process, the ALD process for the ZrO 2 /Si nitride stack structure is a promising candidate for fabricating the ultrathin gate dielectrics for sub-0.1-m complementary metal-oxide-semiconductor transistors.

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“…In addition, such films can be produced by atomic layer deposition [3], organometallic chemical vapor deposition [4], and other methods.…”

Section: Introductionmentioning

confidence: 99%

“…There are a variety of high-dielectric materials, such as oxides of Zr and Hf or rare metals, their silicates, Al 2 O 3 , and aluminates. In addition, such films can be produced by atomic layer deposition [3], organometallic chemical vapor deposition [4], and other methods.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Hf-Si-O films by simultaneous deposition and reaction process using pulsed ion-beam evaporation

et al. 2005

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SUMMARYA pulsed ion-beam evaporation method (IBE) has been applied to prepare hafnium silicate (Hf-Si-O) thin film which is one of the promising gate dielectrics for metal-oxide-semiconductor (MOS) transistor instead of SiO 2 . Here, IBE has the potential to make films containing fewer impurities due to the ablation of pure hafnium oxide (HfO 2 ) targets in vacuum, while the chemical vapor deposition (CVD) precursor leaves its constituents in the films. From microstructural observation, the thin film consists of an upper layer and a lower layer. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the upper layer is polycrystalline HfO 2 and that the lower layer is amorphous hafnium silicate. It may be understood that the hot Hf-O plasma impinging on the Si substrate resulted in the reaction of Si and Hf-O to prepare the Hf-Si-O thin film. The energy from the intense pulsed ion beam makes it possible to induce such a surface reaction. The film has been found to have a uniform distribution of Hf and O in the depth. Impurity content such as carbon incorporated from the environment into the film is lower than the detection limit of XPS.

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Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors

Abstract: Articles you may be interested inGaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al 2 O 3 as gate dielectric Appl. Phys. Lett. 86, 063501 (2005);

Cited by 12 publications

References 19 publications

Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics

Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

Preparation of Hf-Si-O films by simultaneous deposition and reaction process using pulsed ion-beam evaporation

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