Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Wang, T. S.; Tsai, Jung-Tse; Lin, Kun-Wei; Hwang, Jenn-Shyong; Lin, Hao‐Hsiung; Chou, Li-Chang

doi:10.1016/j.mseb.2007.09.075

Cited by 35 publications

(14 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to support the accuracy of these values, three samples consisting of single GaAsSb, GaAsN, and GaAsSbN quantum wells (QWs) were grown under the same reference conditions. For the GaAsSb QW sample, an emission peak of 1.242 eV at RT was found, corresponding to an Sb content of approximately 15% according to theoretical and experimental results for such a GaAsSb QW thickness [15]. Regarding the GaAsN QW, a content of N around 2.3% can be estimated when comparing with similar reported QWs [16].…”

Section: Resultsmentioning

confidence: 82%

“…Figure 5 shows the PL spectra from these samples, where PLs from samples grown at 1 ML s −1 appear as dashed lines while those from samples grown at 2 ML s −1 are represented by continuous lines. Regarding the GaAsSb QWs (black lines), the increase in growth rate induces a blueshift of 101 meV, from which a significant reduction of the Sb content of approximately 8% can be deduced [15]. Likewise, the emission from GaAsN QW (red lines) is also strongly blue-shifted as a consequence of the reduced N incorporation.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

et al. 2014

View full text Add to dashboard Cite

An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission. A particularly strong improvement on the PL is obtained when the growth rate of the CL is increased. This is likely due to an improvement in the structural quality of the quaternary alloy that resulted from reduced strain and composition inhomogeneities. Nevertheless, a significant reduction of Sb and N incorporation was found when the growth rate was increased. Indeed, the incorporation of N is intrinsically limited to a maximum value of approximately 1.6% when the growth rate is at 2.0 ML s−1. Therefore, achieving RT emission and extending it somewhat beyond 1.3 μm were possible by means of a compromise among the growth conditions. This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT.PACS81.15.Hi (molecular beam epitaxy); 78.55.Cr (III-V semiconductors); 73.21.La (quantum dots)

show abstract

Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

et al. 2014

View full text Add to dashboard Cite

show abstract

“…GaAsSb and GaSb growth are also used for manufacturing photoconductive THz emitters [118][119][120], THz laser [121] and double HBT structure [122]. GaAsSb/GaAs quantum wells have attracted attention for their potential applications in electronic and optoelectronic devices, and these structures have been fabricated and evaluated in several reports [123][124][125][126][127][128][129][130][131]. In addition, an undoped GaAsSb quantum well was grown by MLE on undoped semi-insulating (100), (111)A, (111)B and (110) GaAs substrates using trimethylantimonide [132].…”

Section: Gaassb Quantum Well and Gasb Dot Growth For Thz Devicesmentioning

confidence: 99%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

show abstract

“…Lasers (edge emitting [5] and VCSELs [6]) based upon this material have been an active research area due to their high potential for 1.3 μm active regions on a GaAs substrate [7]- [10]. However difficulty in growing high-quality GaAs 1-x Sb x /GaAs QW active material for 1.3Pm operation is one of the main challenges to make this material system commercially viable [11] [12]. This paper investigates the role of device structure design on the carrier recombination and efficiency limiting processes in GaAs 1-x Sb x /GaAs QW lasers to aid in the optimization of GaAsSb/GaAs-based edge-emitting lasers and VCSELs.…”

Section: Introductionmentioning

confidence: 99%

Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Hossain

Hild

Jin

et al. 2010

2010 Photonics Global Conference

View full text Add to dashboard Cite

Abstract-We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of nonradiative recombination to the threshold current density (J th ) and a high characteristic temperature (T 0 ) of 73K at room temperature.

show abstract

Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Cited by 35 publications

References 22 publications

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Contact Info

Product

Resources

About