Characterization of Be-Implanted GaN Annealed at High Temperatures

Ronning, Carsten; Linthicum, K. J.; Carlson, E.P.; Hartlieb, P. J.; Thomson, D. B.; Gehrke, Thomas; Davis, R. F.

doi:10.1557/s1092578300002465

Cited by 5 publications

(6 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These conclusions are in agreement with photoluminescence and x-ray diffraction ͑XRD͒ measurements on implanted GaN. 58 The luminescence, which is sensitive to point defects, was not recovered even after high temperature annealing. By contrast the XRD peaks, which are sensitive to structural damage, reached the strength and shape of nonimplanted GaN after annealing at 1173 K for 15 min.…”

Section: A Heavy Ion Implantation Of In and Sr: Lattice Sites And Desupporting

confidence: 84%

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Ronning¹,

Dalmer²,

Uhrmacher³

et al. 2000

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of In+111 and Sr+89 in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, Na+24 in GaN and AlN as well as Li+8 in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min.

show abstract

Section: A Heavy Ion Implantation Of In and Sr: Lattice Sites And Desupporting

confidence: 84%

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Ronning¹,

Dalmer²,

Uhrmacher³

et al. 2000

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…This concentration corresponds well to the peak concentration of Mg atoms in the implanted region. Since we have never observed the PL-line at 3.25 eV after implantation of Be, Li, Si, Ge, In and Er into GaN [11,16,17], these observations prove that the line at 3.25 eV is only related to the implanted Mg acceptors, which is in agreement with Ref. [18].…”

Section: Resultssupporting

confidence: 87%

“…Furthermore, the intensity of the band edge PL of the 10 15 cm -2 GaN:Mg is suppressed by two orders of magnitude and an additional PL-line appears at 3.40 eV. This line is most likely related to defects created during the implantation procedure, as this line was also observed with varying intensities after implantation of Be, Li, Si, Ge, In and Er [11,17]. We believe that this line is produced by nitrogen or gallium vacancies due to acceptor or donor bound excitons, because it appears also in unimplanted GaN samples depending on the growth conditions.…”

Section: Energy [Ev]mentioning

confidence: 93%

“…Annealing temperatures (T A ) of about 1300 °C for more than 5 minutes are necessary for GaN to fulfil the rule of thumb claiming that implanted semiconductors should be annealed up to 2/3 of the melting point for satisfying electrical activation [1,5,6]. Several special annealing procedures for temperatures above 900 °C have been investigated with limited success: rapid thermal annealing (RTA) [7,8], annealing under N 2 -overpressure [9], or the usage of N 2 , NH 3 or atomic N fluxes, respectively [10,11]. Polycrystalline, sputter deposited AlN cap layers were also used to protect decomposition during annealing.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photoluminescence characterization of Mg implanted GaN

Ronning

Hofsäß

Stötzler

et al. 2000

MRS Internet j. nitride semicond. res.

Self Cite

View full text Add to dashboard Cite

Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor acceptor pair (DAP) transition at 3.25 eV after annealing at high temperatures, which is related to optically active Mg acceptors in GaN. After annealing at 1300 °C a high degree of optical activation of the implanted Mg atoms was reached in the case of low implantation doses. Electrical measurements, performed after removing the AlN-cap and the deposition of Pd/Au contacts, showed no p-type behavior of the GaN samples due to the compensation of the Mg acceptors with native n-type defects.

show abstract

“…The Be redistribution in this case can be attributed to defect-assisted diffusion. 16 It is noted that some groups 15,17 did not see measurable redistribution of Be in GaN. In Fig.…”

Section: F99w382mentioning

confidence: 84%

Activation of Beryllium-Implanted GaN by Two-Step Annealing

Sun

Tan

Chua

et al. 2000

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm−2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of ∼ 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.

show abstract

Characterization of Be-Implanted GaN Annealed at High Temperatures

Cited by 5 publications

References 18 publications

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Photoluminescence characterization of Mg implanted GaN

Activation of Beryllium-Implanted GaN by Two-Step Annealing

Contact Info

Product

Resources

About