Characterization of Bi2S3 nanorods prepared at room temperature

Deshpande, M. P.; Sakariya, Pallavi; Bhatt, S. J.; Garg, Nitya; Patel, K.D.; Chaki, Sunil H.

doi:10.1016/j.mssp.2013.11.022

Cited by 36 publications

(25 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[67][68] Figure S8 To demonstrate the applicability of this robust approach, antimony, tin and silver chalcogenide nanostructures were also prepared in a similar way. The XRD patterns of the resultant nanostructures are shown in Figure S9(a) and Figure S10.…”

Section: Resultsmentioning

confidence: 99%

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Han

et al. 2015

Nano Energy

View full text Add to dashboard Cite

, S. Xue. (2015). Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures. Nano Energy, Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures AbstractA robust low-cost ambient aqueous method for the scalable synthesis of surfactant-free nanostructured metal chalcogenides (MaXb, M=Cu, Ag, Sn, Pb, and Bi; X=S, Se, and Te; a=1 or 2; and b=1 or 3) is developed in this work. The effects of reaction parameters, such as precursor concentration, ratio of precursors, and amount of reducing agent, on the composition, size, and shape of the resultant nanostructures have been comprehensively investigated. This environmentally friendly approach is capable of producing metal chalcogenide nanostructures in a one-pot reaction on a large scale, which were investigated for their thermoelectric properties towards conversion of waste heat into electricity. The results demonstrate that the thermoelectric properties of these metal chalcogenide nanostructures are strongly dependent on the types of metal chalcogenides, and their figure of merits are comparable with previously reported figures for their bulk or nanostructured counterparts.

show abstract

Section: Resultsmentioning

confidence: 99%

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Han

et al. 2015

Nano Energy

View full text Add to dashboard Cite

show abstract

“…Bi 2 S 3 occurs naturally in the form of bismuthinite, which has a lead-gray streaked color with a metallic luster. Bi 2 S 3 crystal has a strongly anisotropic orthorhombic structure in the [4][5][6]. The space between ribbons is depleted of electrons, and than Bi-S bonds within the ribbons [5,7].…”

Section: Introductionmentioning

confidence: 99%

“…Some references have reported that Bi 2 S 3 is an n-type semiconductor [8] with direct band gap 1.30 eV at 300 K and 1.45 eV at 77K. Temperature dependence of the band gap of Bi 2 S 3 in the temperature range T = 77-300 K is dE g /dT = -8 × 10 -4 eV/K and its extrapolated band gap to 0K is 1.0 eV [1,2,4,[8][9][10][11][12]. The earlier reported, band gaps are in the range 1.30-1.70 eV and show the band gap depends on the crystal size [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…What is more, Bi 2 S 3 semiconductor has been widely used in thermoelectric cooling technologies, X-ray computed tomography, electrochemical hydrogen storage, lithium ion battery, micro electro mechanical system (MEMS) devices, infrared detectors and optoelectronic devices [4,11,14,17,18]. Because of its photosensitization in the visible region and its tunable band gap, nontoxicity, low cost synthesis and good absorption properties, Bi 2 S 3 semiconductor attracts more attention as photocatalyst [5,13,19].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hydrostatic pressure effects on the electronic, optical, and photocatalytic properties of ribbon-like Bi2S3: A DFT study

Zahedi

2015

Superlattices and Microstructures

View full text Add to dashboard Cite

“…The decrease in the ( I D / I G ) value is attributed to the decrease in the sp 2 domain size of carbon atoms and conversion of sp 3 to sp 2 species due to further reduction during the hydrothermal process . The Raman spectrum of as‐synthesized Bi 2 S 3 (Figure g) shows peaks at 247 and 966 cm −1 characteristics of A g and surface phonon modes due to high surface to volume ratio, respectively . The Raman analysis clearly confirms the formation of the rGO‐Bi 2 S 3 heterostructure.…”

Section: Resultsmentioning

confidence: 75%

Realization of Efficient Field Emitter Based on Reduced Graphene Oxide‐Bi₂S₃ Heterostructures

Gote

Bhopale

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, Bi2S3 nanorods and reduced graphene oxide (rGO)‐Bi2S3 heterostructures are synthesized using a simple hydrothermal method. The structural, morphological, chemical, and elemental analysis of as‐synthesized materials is performed using X‐ray diffraction (XRD), Raman spectroscopy, field‐emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and X‐ray photoelectron spectroscopy (XPS). Field emission (FE) studies are carried out on both pristine Bi2S3 nanorods and rGO‐Bi2S3 heterostructure samples at a base pressure of ≈1 × 10−8 mbar. The results show that the rGO‐Bi2S3 heterostructure emitter has superior FE performance compared to pristine Bi2S3 emitters in terms of the turn‐on field (2.6 V μm−1 at 10 μA cm−2) and threshold field (4.0 V μm−1 at 100 μA cm−2) along with a high emission current density of ≈1464 μA cm−2 at an applied electric field of 7.0 V μm−1. The rGO‐Bi2S3 heterostructure emitter exhibits very good emission current stability, tested for more than 3 h duration, characterized by standard deviation values ≈2.84 and 4.06, corresponding to preset values 12 and 100 μA. This study implies that one‐step hydrothermal route can be efficiently used to synthesize organic–inorganic heterostructures that possess unique morphology. Furthermore, the synthesized rGO‐Bi2S3 heterostructure emitter shows potential as an electron source for practical application in vacuum microelectronic devices.

show abstract

Characterization of Bi2S3 nanorods prepared at room temperature

Cited by 36 publications

References 28 publications

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Hydrostatic pressure effects on the electronic, optical, and photocatalytic properties of ribbon-like Bi2S3: A DFT study

Realization of Efficient Field Emitter Based on Reduced Graphene Oxide‐Bi₂S₃ Heterostructures

Contact Info

Product

Resources

About

Characterization of Bi2S3 nanorods prepared at room temperature

Cited by 36 publications

References 28 publications

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Hydrostatic pressure effects on the electronic, optical, and photocatalytic properties of ribbon-like Bi2S3: A DFT study

Realization of Efficient Field Emitter Based on Reduced Graphene Oxide‐Bi2S3 Heterostructures

Contact Info

Product

Resources

About

Realization of Efficient Field Emitter Based on Reduced Graphene Oxide‐Bi₂S₃ Heterostructures