1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual
DOI: 10.1109/relphy.1997.584244
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Characterization of bitline stress effects on flash cell after program/erase cycle

V.C. Liu
1
,
Jung-Yi Guo
2
,
Kai‐Chun Chang
3
et al.
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A reliability methodology for low temperature data retention in floating gate non-volatile memories

Kuhn
1
,
Hoefler2,
Harp3
et al.
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
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A reliability methodology for low temperature data retention in floating gate non-volatile memories

Kuhn
1
,
Hoefler2,
Harp3
et al.
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
15
0
3
0
View full textAdd to dashboardCite
show abstract
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