Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy

Kim, Y.D; Choi, Woon; Wakimoto, Hiroki; Usami, Shiro; Tomokage, Hajime; Ando, Toshihiro

doi:10.1016/s0925-9635(99)00199-5

Cited by 17 publications

(8 citation statements)

References 13 publications

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“…Accumulation of positive charge at the upper layer of the emitting sample may slow down the secondary electrons or even prevent their escape to the vacuum. It has been experimentally shown, that the more conductive diamond films exhibit also a much better electron emission properties [2,26,27]. The conductivity may be enhanced by doping or by increase of sp 2 conductive phase percent and grain boundary density.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of electron emission from near-coalescent nanometer thick continuous diamond films

Ternyak

Michaelson

Akhvlediani

et al. 2006

Diamond and Related Materials

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Section: Resultsmentioning

confidence: 99%

Enhancement of electron emission from near-coalescent nanometer thick continuous diamond films

Ternyak

Michaelson

Akhvlediani

et al. 2006

Diamond and Related Materials

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“…It has been shown experimentally, that the more conductive diamond films also show much better electron emission properties. [97][98][99] The conductivity may be enhanced by doping or by increasing the percentage of the sp 2 conductive phase and grain boundary density. Since the studied diamond films are undoped, conductive paths extending to the surface are required to reduce the surface positive charge.…”

Section: Enhancement Of Electron Emission Frommentioning

confidence: 99%

The Impact of Diamond Grain Size on Hydrogen Concentration, Bonding Configuration, and Electron Emission Properties of Polycrystalline‐Diamond Films

Michaelson

Ternyak

Akhvlediani

et al. 2008

Chemical Vapor Deposition

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In the present work we review our recent studies of the incorporation of hydrogen and its bonding configuration in diamond films composed of diamond grains of varying size. Polycrystalline-diamond films are deposited by three different methods; hot filament (HF), microwave (MW) and direct current glow discharge (DCGD)CVD. The size of the diamond grains which constitute the films varies in the following way; hundreds of nanometers in the case of HFCVD (''submicrometer size'', $300 nm), tens of nanometers in the case of MWCVD (3-30 nm), and a few nanometers in the case of DCGDCVD (''ultra nanocrystalline diamond'', $5 nm). Raman spectroscopy (RS), secondary ion mass spectroscopy (SIMS), and high-resolution electron energy loss spectroscopy (HREELS) are applied to investigate the hydrogen trapping in the films. The hydrogen retention of the diamond films increases with decreasing grain size, indicating the likelihood that hydrogen is bonded and trapped in grain boundaries, as well as on the internal grain surfaces. RS and HREELS analyses show that at least part of this hydrogen is bonded to sp 2 -and sp 3 -hybridized carbon, thus giving rise to typical C-H vibration modes. Both vibrational spectroscopies show the increase of sp 2 C-H modes in transition from sub-micrometer to ultra nanocrystalline grain size. The impact of diamond grain size on the shape of the RS and HREELS hydrogenated diamond spectra is discussed. In addition, the dependence of electron emission properties on film thickness and diamond grain size is reported.

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“…It has been reported that BDD films with higher electrical conductivity exhibit a lower turn-on voltage for field emission. 15,17 The electron emission was observed to occur from sites of high electrical conductivity. The possibility of some channel and/or grain boundary conduction was proposed.…”

Section: Introductionmentioning

confidence: 99%

Spatially Heterogeneous Electrical and Electrochemical Properties of Hydrogen-Terminated Boron-Doped Nanocrystalline Diamond Thin Film Deposited from an Argon-Rich CH₄/H₂/Ar/B₂H₆ Source Gas Mixture

Wang

Swain

2007

J. Phys. Chem. C

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Spatially heterogeneous electrical and electrochemical properties were observed for hydrogen-terminated, boron-doped nanocrystalline diamond thin-film electrodes by conducting-probe atomic force microscopy (CP-AFM) and scanning electrochemical microscopy (SECM). CP-AFM was used to simultaneously map the topography and electrical conductivity of the film as a function of the boron-doping level and bias voltage. The electrode was characterized by areas of high electrical conductivity separated by regions of low conductivity. The fraction of a particular film's area that exhibited high conductivity remained invariant with the polarity and magnitude of the bias voltage, while the current flow at any of the conductive regions increased proportionally with the bias voltage indicative of metal-like electronic properties. The fraction of highly conductive area increased with the doping level. One possible cause for the differential conductivity across a film is a nonuniform distribution of boron dopant, which leads to a nonuniform charge carrier concentration. SECM was also used to spatially interrogate the electrochemical activity of the diamond film using three redox systems: Ru(NH3)6 +3/+2, Fe(CN)6 3-/4-, and IrCl6 2-/3-. Isolated regions of high electrochemical activity were found for all three systems, and interestingly, the active regions on a given thin-film electrode were different for each. It is concluded that current flow through this doped nanocrystalline film occurs through a fixed number of conductive sites and all of these sites appear to be electrochemically active for the redox systems tested. The results have important implications for understanding how boron-doped diamond functions as an electrochemical electrode.

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Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy

Cited by 17 publications

References 13 publications

Enhancement of electron emission from near-coalescent nanometer thick continuous diamond films

Enhancement of electron emission from near-coalescent nanometer thick continuous diamond films

The Impact of Diamond Grain Size on Hydrogen Concentration, Bonding Configuration, and Electron Emission Properties of Polycrystalline‐Diamond Films

Spatially Heterogeneous Electrical and Electrochemical Properties of Hydrogen-Terminated Boron-Doped Nanocrystalline Diamond Thin Film Deposited from an Argon-Rich CH₄/H₂/Ar/B₂H₆ Source Gas Mixture

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Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy

Cited by 17 publications

References 13 publications

Enhancement of electron emission from near-coalescent nanometer thick continuous diamond films

Enhancement of electron emission from near-coalescent nanometer thick continuous diamond films

The Impact of Diamond Grain Size on Hydrogen Concentration, Bonding Configuration, and Electron Emission Properties of Polycrystalline‐Diamond Films

Spatially Heterogeneous Electrical and Electrochemical Properties of Hydrogen-Terminated Boron-Doped Nanocrystalline Diamond Thin Film Deposited from an Argon-Rich CH4/H2/Ar/B2H6 Source Gas Mixture

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Spatially Heterogeneous Electrical and Electrochemical Properties of Hydrogen-Terminated Boron-Doped Nanocrystalline Diamond Thin Film Deposited from an Argon-Rich CH₄/H₂/Ar/B₂H₆ Source Gas Mixture