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In this letter, we report the electronic and chemical properties of nitrogen terminated (N-terminated) single crystal (100) diamond surface, which is a promising candidate for shallow NV− centers. N-termination is realized by an indirect RF nitrogen plasma process without inducing a large density of surface defects. Thermal stability and electronic property of N-terminated diamond surface are systematically investigated under well-controlled conditions by in-situ x-ray photoelectron spectroscopy and secondary electron emission. An increase in the low energy cut-off of the secondary electron energy distribution curve (EDC), with respect to a bare diamond surface, indicates a positive electron affinity of the N-terminated diamond. Exposure to atomic hydrogen results in reorganization of N-terminated diamond to H-terminated diamond, which exhibited a negative electron affinity surface. The change in intensity and spectral features of the secondary electron EDC of the N-terminated diamond is discussed.

The high resolution electron energy loss spectrum of polycrystalline diamond films deposited from various isotopic gas mixtures, C12H4+H2, C12D4+D2, and C13H4+H2, are reported. Three types of peaks were unambiguously identified: (1) Pure C–C related peaks (a diamond C–C stretch at ∼150meV and its overtones at 300, 450, and 600meV), (2) pure C–H related peaks (C–H bend at ∼150meV and C–H stretch of sp3 carbon at 360meV), and (3) coupling of C–H and C–C peaks (∼510meV peak due to coupling of the C–H stretch at 360meV with either the C–C stretch or the C–H bend at ∼150–155meV).

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