Characterization of Buffer-Related Current Collapse by Buffer Potential Simulation in AlGaN/GaN HEMTs

Jia, Yonghao; Xu, Yuehang; Lü, Kai; Wen, Zhang; Huang, Andong; Guo, Yong‐Xin

doi:10.1109/ted.2018.2849501

Cited by 37 publications

(28 citation statements)

References 26 publications

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“…The polarization scale parameter with 0.29 has been applied to be consistent with the measured experimental data [12]. Shockley-Read-Hall and Fermi-Dirac statistics are enabled to simulate the trapping and de-trapping mechanisms under different voltage stresses [25,26]. The self-heating effect including the lattice temperature model and electron/hole thermal model is enabled to monitor possible hole/electron emission processes [27].…”

Section: Sentaurus Device Simulation Resultsmentioning

confidence: 99%

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Liu

et al. 2020

IEICE Electron. Express

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In this work, the thermal effect in the dynamic on-resistance (R on) degradation of normally-off p-GaN AlGaN/GaN HEMTs on SiC substrates has been analyzed using pulse-mode voltage stress. Compare to the significant degradation characteristics of GaN-on-Si HEMTs, a suppressed dynamic R on degradation is achieved in GaN-on-SiC due to higher thermal boundary conduction with less ionized acceptor-like buffer traps. Different electrical characteristics have been discussed to reveal the traps mechanisms related to thermal effect. Finally, two-dimension device simulation has been carried out to probe the physical insight into the thermal effect on the dynamic R on degradation.

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Section: Sentaurus Device Simulation Resultsmentioning

confidence: 99%

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Liu

et al. 2020

IEICE Electron. Express

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“…The focus is mainly on the E-mode mechanism as well as the methods of increasing the threshold voltage of the HEMTs [134,135]. And the simulations have also been used to study the gate leakage current [136,137], the device reliability [138], the short channel effects [139], current collapse [140] and so forth. For the simulation of the AlGaN/GaN HEMTs, the most important work is to solve the 2DEG concentration which is generated by spontaneous polarization (P sp ) and piezoelectric polarization (P pe ) [141], as shown in Figure 8.…”

Section: Algan/gan Device Simulationmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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“…The reason may be that some of those papers neglect the initial state of GaN HEMTs with bias stress. Previous work has shown that a GaN device always operates at a certain quiescent bias when the heterostructure under the gate-metal along with the buffers of the GaN devices capture charges, which will serve as an important condition to cause the threshold voltage roll-off [24], [27], [34]. Another reason may be that those dispersive phenomena cannot follow the applied signal at high frequencies because of much longer de-trapping time constants (usually more than hundreds of microsecond) than the reciprocal of microwave frequencies [24], [32].…”

Section: Introductionmentioning

confidence: 99%

“…Another reason may be that those dispersive phenomena cannot follow the applied signal at high frequencies because of much longer de-trapping time constants (usually more than hundreds of microsecond) than the reciprocal of microwave frequencies [24], [32]. Furthermore, the published models [13], [28]- [31], [35] cannot be employed to model pulsed I-V curves with the current collapse critical point (CCCP) [30], [34], [36] in the pulsed I-Vcurves.…”

Section: Introductionmentioning

confidence: 99%

“…The consideration of the initial biases stress is essential for GaN HEMTs models for multi-bias and wideband applications, which have good S-parameters verifications in full frequency band, especially for S 22 . This threshold voltage shift model is based on dynamic ''current collapse'', which is deduced and expanded considering the work in [34]. The proposed model also has good results for pulsed I-V fitting, which even contains the current collapse circuit points.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

et al. 2019

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In this paper, a threshold voltage model for charge trapping effect of AlGaN/GaN HEMTs is proposed. The quiescent bias stresses are considered for well modeling the current collapse critical points in pulsed I-V curves. Moreover, the low-frequency dispersions due to the charge trapping effect are well disposed by using the proposed model, which are validated by the scattering parameters (S-parameters). Also, a trapping related parameter α is proposed in the model, which can be conveniently used to describe the current collapse critical points offset due to the different acceptor energy levels of the dopants in GaN buffer. Different from our previous threshold voltage model, the proposed model in this paper can accurately model the dynamic threshold voltage shift due to the fast capture and slow emission processes. The verifications are carried out by comparing with the transient measured drain current. The proposed model is also implemented into a large-signal model for further verifications. The improved large-signal model with the threshold voltage shift model is verified by 0.25 µm process AlGaN/GaN HEMTs with pulsed I-V, S-parameters, power sweep and load-pull measurements. More accurate agreements between measured and modeled results have been achieved in terms of output power (Pout), gain, and power added efficiency (PAE).

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Characterization of Buffer-Related Current Collapse by Buffer Potential Simulation in AlGaN/GaN HEMTs

Cited by 37 publications

References 26 publications

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

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