Characterization of Cadmium Selenide Thin Film for Solar Cell Application

Alamgir, Khalid; Pervaiz, T.; Arif, Sabahat

doi:10.1080/15567030903419430

Cited by 8 publications

(7 citation statements)

References 22 publications

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“…The results are in agreement with earlier reported work of Velumani et al [8] and Reddy et al [26]. The texture is defined as a non-random distribution of crystal orientation [29] and texture coefficient (TC) presents the texture of a particular plane which implies the preferred growth along deviation from unity [30]. It was calculated using relation concerned and is shown in Fig.…”

Section: Structural Analysissupporting

confidence: 91%

Thickness Dependent Physical Properties of Thermally Evaporated Nanocrystalline CdSe Thin Films

Purohit

Chander

Nehra

et al. 2015

Acta Metall. Sin. (Engl. Lett.)

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This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200°C. These films were subjected to X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscopy (SEM) and electrometer for structural, optical, surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation (111). The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75-1.92 eV and observed to increase with thickness. The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.

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Section: Structural Analysissupporting

confidence: 91%

Thickness Dependent Physical Properties of Thermally Evaporated Nanocrystalline CdSe Thin Films

Purohit

Chander

Nehra

et al. 2015

Acta Metall. Sin. (Engl. Lett.)

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“…It is a direct band gap semiconductor with a band gap in the visible region of the spectrum ( E g = 1.75 eV, T = 298 K). Prior work includes applications of CdSe to field-effect transistors, ,,,− solar photovoltaics, − photodetectors, ,,− and light-emitting diodes. ,, pc -CdSe nanowires were synthesized using the lithographically patterned nanowire electrodeposition or LPNE method (Figure a,b). − The process flow for the LPNE synthesis of CdSe is as follows: A nickel layer is first evaporated on a glass surface, and photoresist is deposited onto the nickel surface (Figure a,b step (i)). The nickel layer thickness will dictate the thickness of the CdSe nanowire that is electrodeposited.…”

Section: Electrodeposition Of Pc-cdse Nanowires and Nanogap Structuresmentioning

confidence: 99%

“…GIXRD data are acquired using surfaces on which linear arrays of thousands of nanowires are deposited at an interwire pitch of 5 μm (e.g., Figure 2d). An estimate of the mean grain diameter, d ave , is obtained from the GIXRD patterns using the line-width of the most intense (e.g., (111) for cubic CdSe) reflection according to the Scherrer eq: 119…”

Section: Electrodeposition Of Pc-cdse Nanowiresmentioning

confidence: 99%

Electrodeposited Nanophotonics

Penner

2014

J. Phys. Chem. C

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Prior work involving the detection and emission of light from semiconductor nanostructures has involved single crystalline nanomaterials. Here we review the use of electrodeposited, polycrystalline (pc), cadmium selenide (CdSe) in nanowires and nanogap device structures for photonics. The photodetectors and photon emitters we describe are symmetrical metal–semiconductor–metal (M-S-M) devices prepared either by the evaporation of two gold contacts onto linear arrays of pc-CdSe nanowires prepared using lithographically patterned nanowires electrodeposition (LPNE), or by the electrodeposition of pc-CdSe directly onto gold nanogaps. The properties of these devices for detecting light using photoconductivity, and for generating light by electroluminescence, are described.

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“…CdSe is a direct band gap semiconductor ( E g = 1.75 eV) that has applications in electrical and photonic devices including photodetectors, ,,− light-emitting diodes, ,, solar photovoltaics, − and field-effect transistors. ,,− Recently, we have demonstrated that field-effect transistors based upon lithographically patterned nc -CdSe nanowire arrays can be prepared, but the emission of light from polycrystalline semiconductor nanowires has not been studied at all, to our knowledge; all CdSe nanowire light-emitting devices have been prepared using single-crystalline nanowires. ,,, In this work, lithographically patterned nanowire electrodeposition (LPNE) method is used to fabricate arrays of hundreds of nanocrystalline CdSe ( nc -CdSe) nanowires with dimensions of 400–450 nm ( w ) × 60 nm ( h ) and lengths of millimeters. We compare the EL properties of nc -CdSe nanowires that were subjected to either of two post-thermal annealing processes: 300 °C × 4 h in nitrogen, and 450 °C × 1 h in nitrogen.…”

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confidence: 99%

Electroluminescent, Polycrystalline Cadmium Selenide Nanowire Arrays

et al. 2013

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Electroluminescence (EL) from nanocrystalline CdSe (nc-CdSe) nanowire arrays is reported. The n-type, nc-CdSe nanowires, 400-450 nm in width and 60 nm in thickness, were synthesized using lithographically patterned nanowire electrodeposition, and metal-semiconductor-metal (M-S-M) devices were prepared by the evaporation of two gold contacts spaced by either 0.6 or 5 μm. These M-S-M devices showed symmetrical current voltage curves characterized by currents that increased exponentially with applied voltage bias. As the applied biased was increased, an increasing number of nanowires within the array "turned on", culminating in EL emission from 30 to 50% of these nanowires at applied voltages of 25-30 V. The spectrum of the emitted light was broad and centered at 770 nm, close to the 1.74 eV (712 nm) band gap of CdSe. EL light emission occurred with an external quantum efficiency of 4 × 10(-6) for devices with a 0.60 μm gap between the gold contacts and 0.5 × 10(-6) for a 5 μm gap-values similar to those reported for M-S-M devices constructed from single-crystalline CdSe nanowires. Kelvin probe force microscopy of 5 μm nc-CdSe nanowire arrays showed pronounced electric fields at the gold electrical contacts, coinciding with the location of strongest EL light emission in these devices. This electric field is implicated in the Poole-Frenkel minority carrier emission and recombination mechanism proposed to account for EL light emission in most of the devices that were investigated.

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Characterization of Cadmium Selenide Thin Film for Solar Cell Application

Cited by 8 publications

References 22 publications

Thickness Dependent Physical Properties of Thermally Evaporated Nanocrystalline CdSe Thin Films

Thickness Dependent Physical Properties of Thermally Evaporated Nanocrystalline CdSe Thin Films

Electrodeposited Nanophotonics

Electroluminescent, Polycrystalline Cadmium Selenide Nanowire Arrays

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