The surface recombination velocity on high-resistivity CdTe with several different crystallographic orientations-(111), 5 off from (111), 8 off from (311), and (511)-has been investigated by using a " -model" spectral fitting method in combination with time-of-flight drift mobility measurement. In the samples orientated parallel to (111) and 5 off from (111), the Cd face exhibits a higher surface recombination velocity ( 6 10 5 cm/s) than the Te face ( 3 10 5 cm/s). Away from the polar face and toward the (511) face, the difference is less pronounced, although not completely absent.