Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

Lee, Sang‐Hyun; Baek, Chang‐Ki; Park, Soo‐Young; Kim, Dong-Won; Sohn, Dong Kyun; Lee, Jeong-Soo; Kim, D. M.; Jeong, Yoon‐Ha

doi:10.1109/led.2012.2209625

Cited by 25 publications

(16 citation statements)

References 11 publications

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“…However, if noise is considered, it is also well known that scaling electronic devices down to the nanoscale results in enhanced surface scattering and enhanced noise . The results shown in Figure indicate the opposite . The authors explain the improved noise performance for smaller diameter devices as a result of a special phenomenon called volume inversion, which means that the current flows mostly in the middle of the channel instead of at the edges, resulting in less surface scattering and thus less noise.…”

Section: Low‐frequency Noisementioning

confidence: 97%

“…Comparison of the normalized current noise power density for silicon nanowire field‐effect transistors ( FET s), showing that as the channel diameter is reduced, the normalized noise power also decreased. This reduction in noise is attributed to a volume inversion effect, where the conducting channel is formed in the middle of the nanowire cross‐section, resulting in less surface scattering …”

Section: Low‐frequency Noisementioning

confidence: 99%

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Performance limitations for nanowire/nanoribbon biosensors

Rajan

Duan

Reed

2013

WIREs Nanomed Nanobiotechnol

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Field-effect transistor-based biosensors (bioFETs) have shown great promise in the field of fast, ultra-sensitive, label-free detection of biomolecules. Reliability and accuracy, when trying to measure small concentrations, is of paramount importance for the translation of these research devices into the clinical setting. Our knowledge and experience with these sensors has reached a stage where we are able to identify three main aspects of bioFET sensing that currently limit their applications. By considering the intrinsic device noise as a limitation to the smallest measurable signal, we show how various parameters, processing steps and surface modifications, affect the limit of detection. We also introduce the signal-to-noise ratio of bioFETs as a universal performance metric, which allows us to gain better insight into the design of more sensitive devices. Another aspect that places a limit on the performance of bioFETs is screening by the electrolyte environment, which reduces the signal that could be potentially measured. Alternative functionalization and detection schemes that could enable the use of these charge-based sensors in physiological conditions are highlighted. Finally, the binding kinetics of the receptor-analyte system are considered, both in the context of extracting information about molecular interactions using the bioFET sensor platform and as a fundamental limitation to the number of molecules that bind to the sensor surface at steady-state conditions and to the signal that is generated. Some strategies to overcome these limitations are also proposed. Taken together, these performance-limiting issues, if solved, would bring bioFET sensors closer to clinical applications.

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Section: Low‐frequency Noisementioning

confidence: 97%

Section: Low‐frequency Noisementioning

confidence: 99%

Performance limitations for nanowire/nanoribbon biosensors

Rajan

Duan

Reed

2013

WIREs Nanomed Nanobiotechnol

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“…It is known that the 1/f low-frequency noise level decreases in smaller channel diameters Si NW FETs. 52 This channel diameter-dependent noise behavior is clarified in terms of the effective oxide trap density and the fraction of electrons near the Si-SiO 2 interface.…”

Section: Random Telegraph Signal Behavior Of Drain Currentmentioning

confidence: 99%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Journal of Applied Physics

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Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

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“…6 All the n-type nanowire FETs had the same arsenic doping concentrations of 10 20 cm −3 at the S/D regions with the fixed length (L sd ) of 5 nm. Nanowire channels were lightly-doped with boron of 10 16 cm −3 to concentrate on the impact of arsenic discrete dopants on the RDF effects. 11 All the nanowire FETs had the same physical gate length (L gate ) of 20 nm, SiO 2 thickness (t ox ) of 1 nm, and S/D extension lengths (L EXT ) of 6 nm.…”

mentioning

confidence: 99%

“…R sd values were extracted using Y-function technique, 15 applicable to the nanowire FETs with D NW smaller than 10 nm due to volume inversion effects neglecting surface roughness scattering within the channel regions in the inversion regimes. 16 One example for transfer characteristics and Y-function curves of the nanowire FETs with the D NW of 5 nm and the L j of 0.5 nm/dec in the forward-bias condition was shown in Fig. 2.…”

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confidence: 99%

Variability study of Si nanowire FETs with different junction gradients

et al. 2016

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Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs) are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

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Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

Cited by 25 publications

References 11 publications

Performance limitations for nanowire/nanoribbon biosensors

Performance limitations for nanowire/nanoribbon biosensors

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Variability study of Si nanowire FETs with different junction gradients

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