Characterization of chemically-deposited aluminum-doped CdS thin films with post-deposition thermal annealing

Fernández-Pérez, Arturo; Navarrete, Carlos; Valenzuela, Paulina; Gacitúa, William; Mosquera, Edgar; Fernández, H. Moreno

doi:10.1016/j.tsf.2016.12.036

Cited by 38 publications

(16 citation statements)

References 30 publications

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“…Recently, many studies have attempted to investigate and develop a modified CdS bandgap by determining point defects and doping processes for increasing the absorption of the incident light. The popular atoms used for doping the CdS films included indium, tin, copper, gallium, aluminium, and magnesium 17 – 22 . Silver (Ag) was a Group I element, which acted as the donor dopant of (II–VI) semiconductors and improved their electrical properties.…”

Section: Introductionmentioning

confidence: 99%

New systematic study approach of green synthesis CdS thin film via Salvia dye

Najm

Naeem

Alabboodi³

et al. 2022

Sci Rep

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In this study, we aimed to increase the knowledge regarding the response mechanisms which were associated with the formation of CdS thin films. CdS thin film remains the most appealing alternative for many researchers, as it has been a capable buffer material for effect in film based polycrystalline solar cells (CdTe, CIGSe, CZTS). The Linker Assisted and Chemical Bath Deposition (LA-CBD) technique, which combines the Linker Assisted (LA) technique and the chemical bath deposition (CBD) method for forming high quality CdS thin film, was presented as an efficient and novel hybrid sensitization technique. CdS films were bound to soda lime with the help of electrostatic forces, which led to the formation of the intermediate complexes [Cd (NH3)4]2+ that helped in the collision of these complexes with a soda lime slide. Salvia dye and as a linker molecule 3-Mercaptopropionic acid (MPA) was used in the one step fabrication technique. Optical results showed that the bandgap varied in the range of (2.50 to 2.17) eV. Morphological properties showed a homogeneous distribution of the particles that aspherical in shape in the CdS + MPA + Salvia dye films. This technique significantly affected on the electrical characterizations of CdS films after the annealing process. The CdS + Ag + MPA + Salvia dye films showed the maximum carrier concentration and minimum resistivity, as 5.64 × 10 18 cm−3 and 0.83 Ω cm respectively.

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Section: Introductionmentioning

confidence: 99%

New systematic study approach of green synthesis CdS thin film via Salvia dye

Najm

Naeem

Alabboodi³

et al. 2022

Sci Rep

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“…Conventionally, the optoelectronic properties of CdS can be tailored by two approaches, i.e., doping and compositing. In the doping process, the various dopants such as aluminum [10], copper [11], nickel [12], sodium [13], and gallium [14] have been employed, where the lattice of the host (CdS) can be changed by the dopant atoms [15]. In compositing, CdS is combined with one or more materials to obtain unique and improved material properties.…”

Section: Introductionmentioning

confidence: 99%

Performance of Graphene–CdS Hybrid Nanocomposite Thin Film for Applications in Cu(In,Ga)Se2 Solar Cell and H2 Production

et al. 2020

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A graphene–cadmium sulfide (Gr–CdS) nanocomposite was prepared by a chemical solution method, and its material properties were characterized by several analysis techniques. The synthesized pure CdS nanoparticles (NPs) and Gr–CdS nanocomposites were confirmed to have a stoichiometric atomic ratio (Cd/S = 1:1). The Cd 3d and S 2p peaks of the Gr–CdS nanocomposite appeared at lower binding energies compared to those of the pure CdS NPs according to X-ray photoelectron spectroscopy analyses. The formation of the Gr–CdS nanocomposite was also evidenced by the structural analysis using Raman spectroscopy and X-ray diffraction. Transmission electron microscopy confirmed that CdS NPs were uniformly distributed on the graphene sheets. The absorption spectra of both the Gr–CdS nanocomposite and pure CdS NPs thin films showed an absorption edge at 550 nm related to the energy band gap of CdS (~2.42 eV). The Cu(In,Ga)Se2 thin film photovoltaic device with Gr–CdS nanocomposite buffer layer showed a higher electrical conversion efficiency than that with pure CdS NPs thin film buffer layer. In addition, the water splitting efficiency of the Gr–CdS nanocomposite was almost three times higher than that of pure CdS NPs.

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“…S5†), we can confirm that the CdSe/CdS QD sample exhibits a zinc-blende phase of CdS with three peaks assigned to (111), (220), and (311). After Al doping, the position of these peaks slightly shifts to a larger angle, which could be attributed to the doping of smaller Al atoms into the CdS shell 33. In general, impurity doping will generate some defects and thus affect the optical properties of QDs.…”

Section: Resultsmentioning

confidence: 99%