Characterization of chemically deposited nanocrystalline CdSe thin films from transmittance spectra

Borah, Mothura Nath; Chaliha, Sumbit

doi:10.1016/j.matpr.2021.02.714

Cited by 1 publication

(2 citation statements)

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“…The colourless bath turned orange red within 1 h. The cleaned glass substrates were kept vertically in the chemical bath for 12 h for deposition using specially designed sample holder. Thus thin films were allowed to deposit on both surface of the substrates [23,24]. They were thoroughly washed with doubly distilled water and the set of thin films were then annealed in air for half an hour at 100 °C (Figure 1).…”

Section: Preparation Of Nanocrystalline Cdse Thin Filmsmentioning

confidence: 99%

“…This is more than that of the equivalent value for bulk CdSe (1.74 eV). The band gap increases with the increase in the molarity of deposition which is due to the nano phase formation in the thin films [24,29].The additional absorption peak which is being observed at around 875 nm along the longer side of wavelength of the 1M thin film is attributed to defects in the thin film [30]. The optical band gap corresponding to this lower peak is 1.41eV.Thus just by changing the molarity of the solution used for deposition of the thin films the band gaps of the deposited thin films may be altered.…”

Section: Spectral Response Characteristicsmentioning

confidence: 99%

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Effect of Intensity and Wavelength of Illumination on the Photoelectronic Properties of Nanocrystalline CdSe Thin Films

Sarmh¹,

Borah²

2022

Trends Sci

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Photoelectronic properties of nanocrystalline CdSethin films prepared by chemical bath deposition (CBD) technique at room temperature are studied taking its molar concentration as a function. Structural analysis of the deposited thin films shows that change of molarity brings a variation in the crystalline sizes of the thin films. Such thin films show suitable photoelectronic properties for the construction of different optoelectronic devices. The photocurrents are observed to be significantly defect controlled in the visible range of wavelengths. The transport mechanism for the thin films is generally a doubly activated process and the photocurrent decay characteristics curves are found to exhibit 2 different decay times which actually correspond to 2 distinct trap levels. HIGHLIGHTS The photoelectronic properties of nanocrystalline CdSe thin films deposited by CBD method are studied From the XRD of the films diffraction peaks may be indexed to diffraction basically from the (111) plane of zincblende structure The optical band gap may be varied with the molarity of the solution used for deposition Photoelectronic properties are dependent of the intensity of different monochromatic illuminations Photocurrents for the films are basically controlled by the grain boundary defects Growth and decay of photocurrent are effectively governed by different kind of traps GRAPHICAL ABSTRACT

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Section: Preparation Of Nanocrystalline Cdse Thin Filmsmentioning

confidence: 99%