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Nanocrystalline CdSe films are deposited on glass substrates by the chemical bath deposition method at different molarities and at room temperature. The structural parameters such as lattice constant, internal strain and dislocation density of CdSe nanocrystals are measured from X-ray diffractrograms using the Williamson-Hall plot. The average crystallite size of prepared films are found to be from 9.5 to 26 nm. The prepared films are found to be under compressive strain with very high dislocation density of the order of 10 17 line m À2.

Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7×10 14 cm −3 have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum.

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