Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0⋅ ⋅6-0⋅ ⋅7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0⋅ ⋅4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect the J-V characteristic.

Polyaniline Powdered sample was chemically synthesized using aniline and doped with HCl. Ultra thin film and Schottky junction with Al metal have been fabricated from this powdered sample Ultrathin film of polyaniline shows amorphous nature of the film. Two activation energies of these films at two different temperatures regions within 25-120^oC have been observed. Schottky Junction with Al meal shows that the diode ideality factor is much higher than unity. Barrier height of this Schottky junction is estimated to be around 0.61eV. C-V plot of the junction indicates that the carrier concentration is about 10¹⁵cm^-3. There are various factors found to affect the junction to deviate from ideal Schottky behaviour

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In this paper some electrical and optical pr~perties of n-type CdTe films prepared by rf sputtering at I80 W power have been reported, For daping the films a number of pellets of pure Cd placed on the CdTe target were shnultaneously sputtered with the target material to get Cd-doped CdTe films. The films after doping were found n-type, l~Iaximnrn doping concentration obtained this way was of the order of 1014 t~n-3. XR[? spectra of target material and the rf-sputtered films were found to he more or less simUar. All the rihns were found to have large number of defects indicated by profound aging effect in the initial stages af aging. The films became stable for measurements after about 8-10 days. Activation energy and band gap found from the temperature dependence of dark condttctivity were 0.5 eu and 1.43 eV respectively. Photoeouductivity of the films was studied and fire photoconductive rise time, decay time and the decay constants were determined from the photoconc/uetive rise and decay curves at 500 Lx and 1000 Lx of intensity of illumination.