Electrical and optical properties of rf-sputtered CdTe films

Sarmah, P. C.; Rahman, A.

doi:10.1007/bf02927563

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…The details of this experimental arrangement have been discussed elsewhere [15]. A Keithley system electrometer (Model 6514) was used to measure the current in dark and under illumination.…”

Section: Methodsmentioning

confidence: 99%

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

Chaliha¹,

Borah²,

Sarmah

et al. 2009

Int J Thermophys

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Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7×10 14 cm −3 have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum.

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Section: Methodsmentioning

confidence: 99%

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

Chaliha¹,

Borah²,

Sarmah

et al. 2009

Int J Thermophys

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“…The J-V curves were drawn with the help of X-Y recorder (Digital Electronics Ltd.). Details of experimental arrangement and measurement have been reported in our earlier paper (Sarmah and Rahman 1998).…”

Section: Methodsmentioning

confidence: 99%

Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions

Sarmah

Rahman

2001

Bull Mater Sci

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Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0⋅ ⋅6-0⋅ ⋅7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0⋅ ⋅4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect the J-V characteristic.

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“…The RF magnetron sputtering permits deposition at low temperature, and gives better adhesion, larger coverage and higher film density than other methods. The main advantage of RF magnetron sputtering is that the stoichiometry of the sputtering material is retained in the deposited film making it a suitable technique for depositing intermetallic compounds [19]. Another advantage of the sputtering technique is the use of low energy particle bombardment for achieving lower growth temperatures along with the use of excited species for improving the doping control during growth [20].…”

Section: Introductionmentioning

confidence: 99%

Substrate temperature dependent structural, optical, morphology and electrical properties of RF sputtered CdTe thin films for solar cell application

Kulkarni

Pawbake

Waykar

et al. 2016

J Mater Sci: Mater Electron

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In this work, we have studied the influence of substrate temperature on structural, morphology optical, and electrical properties of CdTe thin films deposited by RF magnetron sputtering. Films were analyzed by using variety of techniques such as low angle X-ray Diffraction, UV-Visible spectroscopy, Raman spectroscopy, Field emission scanning electron microscopy (FE-SEM), Energy-dispersive X-ray spectroscopy (EDAX) Hall Measurement etc. Low angle XRD analysis showed that CdTe films are polycrystalline and has cubic structure with preferred orientation is along (111) direction. Raman scattering studies revealed the presence of single phase CdTe over the entire range of substrate temperature studied. The FE-SEM analysis showed that CdTe growth process occurred predominantly by grain growth and not through the layerby-layer mode. Compositional analysis carried out using EDAX suggests that CdTe films deposited at low substrate temperatures are Te rich and that at higher temperatures is Cd rich. Electrical resistivity of CdTe films decreases with increase in substrate temperature and whereas positive increase in Hall coefficient suggests as-deposited CdTe films are p-type. The UV-Visible spectroscopy analysis showed that the band gap increases from 1.47 to 1.51 eV when the substrate temperature increased from 50 to 300°C. Such optimum band gap CdTe can be use as absorber material in photovoltaic applications like the CdS/ CdTe and ZnO/CdTe solar cells.

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Electrical and optical properties of rf-sputtered CdTe films

Cited by 7 publications

References 6 publications

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions

Substrate temperature dependent structural, optical, morphology and electrical properties of RF sputtered CdTe thin films for solar cell application

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