Characterization of CMOS compatible waveguide-coupled leaky-mode photodetectors

Yuan, Guangwei; Pownall, R.; Nikkel, P.; Thangaraj, C.; Chen, T.W.; Lear, K.L.

doi:10.1109/lpt.2006.879527

Cited by 14 publications

(3 citation statements)

References 7 publications

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“…In addition to a recent report of top-WG-integrated Ge PD, 7 there have been a few previous reports of Si PDs [8][9][10][11] integrated with upper dielectric WGs. However, most of them exhibited slow evanescent wave coupling rates and amorphous 10 or polycrystalline 11 silicon detectors, which also suffered from low quantum efficiency and high bias voltage requirements.…”

mentioning

confidence: 98%

“…Therefore, it is critical to understand the trends in coupling behavior and device performance dependency on design parameters, which were not addressed in previous studies [8][9][10][11] as they reported on specific material and design choices. In our current work, we report the dependence of coupling efficiency on WG design and the resulting impact on PD performance.…”

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confidence: 99%

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Coupling efficiency of monolithic, waveguide-integrated Si photodetectors

Ahn

Hong

Kimerling

et al. 2009

Applied Physics Letters

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A waveguide-integrated photodetector provides a small-footprint, low-capacitance design that overcomes the bandwidth-efficiency trade-off problem of free space optics. High performance silicon devices are critical to the emergence of electronic-photonic integrated circuits on the complementary metal oxide semiconductor platform. We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon oxynitride channel waveguides. We report over 90% coupling efficiency of 830 nm light from the silicon oxynitride (SiOxNy) channel waveguide to the silicon photodetector. We analyze the dependence of coupling on waveguide index by comparing coupling from low index-contrast waveguides and high index-contrast waveguides.

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mentioning

confidence: 98%

mentioning

confidence: 99%

Coupling efficiency of monolithic, waveguide-integrated Si photodetectors

Ahn

Hong

Kimerling

et al. 2009

Applied Physics Letters

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“…In recent years also for lab-on-chip devices for biosensing a clear trend towards integrated optical devices is evident [2]. On-chip integrated detectors operating in the telecom window are mainly based on III-V or SiGe, and recent achievements are reported in references [3][4][5][6][7][8]. For lab-on-chip devices the nearinfrared (NIR) spectral region between ~750nm and 900nm represents an interesting alternative.…”

Section: Introductionmentioning

confidence: 99%

Integrated silicon photodetector for lab-on-chip sensor platform

Samusenko¹,

Hamedan²,

Pucker

et al. 2015

2015 XVIII AISEM Annual Conference

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In this paper we demonstrate design, fabrication and characterization of both amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) photoconductive detectors integrated on top of passive silicon oxynitride (SiON) circuit. The devices show the best responsivity of 0.5mA/W and 0.8A/W (under broadband illumination in the UV-VIS-NIR spectral region) and dark current of less than 0.23nA and 270nA at the bias of 5V for amorphous and polycrystalline silicon, respectively. The applicability of devices for lab-on-chip biosensor operating at 850nm has been proved by demonstration the ability of the detector to reproduce the sensor spectral response.

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