Characterization of Copper Voids in Damascene Processes

Guldi, R.L.; Shaw, J. B.; Ritchison, J.; Corum, D.; Oestreich, S.; Sherman, Kara; Lin, J.H.; Fiordalice, R.

doi:10.1109/tsm.2004.835721

Cited by 8 publications

(6 citation statements)

References 1 publication

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“…Crescent pits defect is a kind of defect in the 0.13 copper BEOL and bellow node process [1][2][3][4] . The typical appearance of the crescent defect is shown in the Fig.1.…”

Section: Introductionmentioning

confidence: 99%

Fab Environment Effect on Crescent Pits Defect in Cu Metallization Process

Kang¹,

Lin

He³

et al. 2012

ECS Trans.

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Copper (Cu) material is being widely used in the advance ultra large-scale integration (ULSI) in the metallization process due to its low resistivity and good performance on EM in 130nm and below technology node. In Cu metallization process of 130nm, crescent pits defect on wafer edge is often scanned and found post Cu CMP process. Thus interconnect reliability and yield loss become key issue to ensure device quality and performance. In the filed, some studies focus on the Cu plating wetting ability improvement to reduce pits defect. In this paper, atmosphere VOC (Vapor Organic Compound) effect is studied to reduce crescent pits formation.

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“…Crescent pits defect is a kind of defect in the 0.13 copper BEOL and bellow node process [1][2][3][4] . The typical appearance of the crescent defect is shown in the Fig.1.…”

Section: Introductionmentioning

confidence: 99%

Fab Environment Effect on Crescent Pits Defect in Cu Metallization Process

Kang¹,

Lin

He³

et al. 2012

ECS Trans.

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“…Besides detecting the physical defects that are beyond the capability of optical inspection equipment, the unique capability for e-beam to detect electrical defects such as circuit shorts or leaks and open or partially open circuits make it an equipment of choice for interconnect process inspection and monitoring. [1], [2], [3] Figure 1 illustrates eScan®300, which is an e-beam inspection system developed by Hermes Microvision Incorporated (HMI). Its e-beam system consists an electron gun, an e-beam column, objective apertures, a ring-shaped semiconductor detector to detect both secondary electrons (SE) and back scattered electrons (BSE), and a focus lens assembly.…”

Section: Introduction To E-beam Defect Inspectionmentioning

confidence: 99%

Leakage monitoring and control with an advanced e-beam inspection system

et al. 2006

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Junction leakage control is studied with electron beam (e-beam) defect inspection after tungsten chemical mechanical polishing (WCMP). Leakage-induced bright voltage contrast (BVC) defects are detected. For both wafer to wafer (WtW) and within wafer (WiW), e-beam inspection results strongly correlate with leakage results of wafer acceptance test (WAT). Failure analysis results showed that the junction leakage was caused by lateral diffusion of nickel silicide (NiSi) underneath the spacer. The extrusion length correlates with gray levels of the tungsten plug very well. In this study we found the optimized condition to suppress junction leakage and also confirmed that post WCMP e-beam inspection can be used to monitor and control junction leakage.

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“…Earlier generation electron beam (e-beam) inspection systems can detect open defects via voltage contrast (VC) variation on product wafers. [1][2][3] We did the parallel studies of DVC defects inspection and classification using eScan ® 300, an e-beam in-line inspection system, and verified cross-sectional SEM/TEM in the fab FA lab. We found that not only can eScan ® 300 detect open defects, it also can detect partial opens and plug voids via the different gray level values (GLV) of the e-beam inspection image.…”

Section: Introductionmentioning

confidence: 99%

High-resistance W-plug monitoring with an advance e-beam inspection system

et al. 2006

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Dark voltage contrast (DVC) defects are detected on normally bright tungsten plugs (W-plugs) during the in-line e-beam inspection step. Cross-sectional scanning electron microscope (SEM) and transmission electron microscope (TEM) in a failure analysis (FA) lab verified that DVC defects with different gray level values (GLV) are caused by different resistances of the W-plugs. We found that DVC defects with lower GLV (GLV1) are W-plugs that are open or almost open. DVC defects with higher GLV GLV2 are caused by partially open W-plugs and in-plug voids. Wafer acceptance test (WAT) results correlated well with e-beam inspection results.

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Characterization of Copper Voids in Damascene Processes

Cited by 8 publications

References 1 publication

Fab Environment Effect on Crescent Pits Defect in Cu Metallization Process

Fab Environment Effect on Crescent Pits Defect in Cu Metallization Process

Leakage monitoring and control with an advanced e-beam inspection system

High-resistance W-plug monitoring with an advance e-beam inspection system

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