Characterization of crosstalk between CMOS photodiodes

Brouk, Igor; Nemirovsky, Y.; Lachowicz, Stefan; Gluszak, E.A.; Hinckley, Steven; Eshraghian, Kamran

doi:10.1016/s0038-1101(01)00268-4

Cited by 21 publications

(11 citation statements)

References 8 publications

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“…Crosstalk in detector arrays (and systems) from various other sources has been considered. 4,5,6,7,8,9 The optical system's PSF frequently contributes crosstalk to observed results, and must be distinguished from that of the array. "Optical crosstalk" (reflection of light within the detector) may also be significant if penetration depth is large.…”

Section: Basic Mechanismmentioning

confidence: 99%

Interpixel capacitance in nondestructive focal plane arrays

2004

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Inter-pixel capacitive coupling can exist in a non-destructive detector array if the detector nodes change voltage as they integrate charge and the design of the device allows for an electric field to exist between adjacent collection nodes. Small amounts of inter-pixel capacitance can cause large errors in the measurement of poissonian noise versus signal, and all subsequently derived measurements such as nodal capacitance and quantum efficiency. Crosstalk and MTF can also be significantly influenced by interpixel capacitance. Two 1k × 1k Raytheon SB226-based hybridized silicon PIN arrays were tested for nodal capacitance and MTF. Initial results indicated unexpected and unexplainably large nodal capacitance, poor MTF, and odd edge spread. It was hypothesized that inter-pixel capacitive coupling was responsible for these discrepancies. A stochastic method of measuring the coupling using 2D autocorrelation and Fourier Transform techniques was devised and implemented. Autocorrelation of the shot noise in the images revealed a correlation consistent with 3.2% interpixel capacitive coupling. When the effects of the measured interpixel capacitance were taken into account, the initially measured nodal capacitance of 56 fF was found to be 30% higher than the corrected nodal capacitance measurement of 43 fF. Large discrepancies between the theoretical and observed edge spread response were also greatly reduced. A simulation of the electric field in the PIN detector intrinsic region predicted an interpixel coupling very close to the observed coupling. Interpixel capacitance was also observed in 2k × 2k Raytheon SB304-based InSb detector arrays, but was not strongly evident in a bare Raytheon SB226 multiplexer.

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Section: Basic Mechanismmentioning

confidence: 99%

Interpixel capacitance in nondestructive focal plane arrays

2004

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“…The development of fast high-resolution CMOS imaging arrays, for application across a broad spectral range, requires suitable modifications to pixel architecture to improve individual photodiode quantum efficiency and crosstalk suppression (Furumiya et al, 2001;Brouk et al, 2003;Lee et al, 2003;Ghazi 2002). Presented in this chapter are the results of simulation studies that compare the detection efficacy of previous simulated photodiode architectures with the various configurations of the Stacked Gradient Poly-Homojunction (StaG) photodiode genre.…”

Section: Introductionmentioning

confidence: 99%

Extrinsic Evolution of the Stacked Gradient Poly-Homojunction Photodiode Genre

Jansz¹,

Hinckley²

2011

Advances in Photodiodes

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“…The electrical crosstalk is mainly caused by the diffusion of photons created by charge carriers from the illuminated pixel to the non-illuminated pixels [3,4]. This paper presents the electrical crosstalk studies on front-illuminated photodiode arrays for medical CT applications comparing two different guard ring structures.…”

Section: Introductionmentioning

confidence: 99%