Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition

Inuzuka, Yuki; Ike, Shinichi; Asano, Tanemasa; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

doi:10.1016/j.tsf.2015.10.043

Cited by 11 publications

(13 citation statements)

References 19 publications

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“…They examined the growth of Ge 1− x Sn x layers on a Si substrate using the MOCVD method at 350–380 °C. Recently, we demonstrated the epitaxial growth of Ge 1− x Sn x layers on a Ge(001) substrate using the MOCVD method [50, 51]. In our study, we used the precursors of TBGe and tri-butyl-vinyl-tin, t-C 2 H 9 SnCH 2 .…”

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

“…A Ge 1− x Sn x epitaxial layer with an Sn content of 5.1% was achieved using MOCVD at 300 °C. The surface morphology and crystalline structures of Ge 1− x Sn x epitaxial layers prepared using the MOCVD method are superior compared to those of Ge 1− x Sn x layers grown with the MBE method [51]. In the Ge 1− x Sn x layer prepared with low-temperature MBE growth, we can often see inhomogeneous contrast in the cross-sectional TEM observation, which indicates the fluctuation of the lattice constant of Ge 1− x Sn x layer.…”

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

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Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

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109

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We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.

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Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

Self Cite

176

109

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“…The details of these layers were reported in a previous paper, where we confirmed the good crystallinity of the Ge 1−x Sn x epitaxial layers and Ge 1−x Sn x epitaxial layers prepared by the MBE method. 32 Figure 2a shows the (J-V) characteristics of Ge 1−x Sn x /Ge pn diodes with various Sn contents at a measurement temperature of 300 K. We estimated the pn junction characteristics using the following equation for forward bias current density J F :…”

Section: Deep-level Defects In Ge 1−x Sn X Epitaxial Layers-to Invest...mentioning

confidence: 99%

Characterization of Shallow- and Deep-Level Defects in Undoped Ge₁₋_xSn_xEpitaxial Layers by Electrical Measurements

Takeuchi

Asano

Inuzuka

et al. 2015

ECS J. Solid State Sci. Technol.

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Shallow- and deep-level defects in undoped Ge1−xSnx epitaxial layers on Ge and Si grown by molecular beam epitaxy and metal–organic chemical vapor deposition were investigated by Hall effect, capacitance–voltage, and deep-level transient spectroscopy (DLTS) measurements. We discuss the effects of postdeposition annealing and introducing hydrogen during crystal growth on shallow-level defects in undoped Ge1−xSnx epitaxial layers. Using DLTS measurements, we found shallow- (

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“…The growth of the Ge layer without a Sn precursor was also examined for comparison. 26,27) The Ge and Sn precursors used in this MOCVD growth were t-BGe and TBVSn, respectively. The flow rates of t-BGe and TBVSn were 1.2 and 3.7 × 10 −3 sccm, respectively.…”

Section: Sample Preparationmentioning

confidence: 99%

“…Recently, the epitaxial growth of Ge and Ge 1−x Sn x layers with metal-organic (MO) precursors has been reported. [22][23][24][25][26][27][28][29][30][31][32] MO precursors can be generally easily handled because they are safer than hydrogen precursors, and they also hardly cause corrosion of metals unlike chlorine precursors.…”

Section: Introductionmentioning

confidence: 99%

Selective growth of Ge₁₋_xSn_xepitaxial layer on patterned SiO₂/Si substrate by metal–organic chemical vapor deposition

Takeuchi

Washizu

Ike

et al. 2017

Jpn. J. Appl. Phys.

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We have investigated the selective growth of a Ge 1%x Sn x epitaxial layer on a line/space-patterned SiO 2 /Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO 2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge 1%x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge 1%x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge 1%x Sn x growth on the SiO 2 region. In addition, we found that the Sn content in the Ge 1%x Sn x epitaxial layer increases with width of the SiO 2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge 1%x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

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Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition

Cited by 11 publications

References 19 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Characterization of Shallow- and Deep-Level Defects in Undoped Ge₁₋_xSn_xEpitaxial Layers by Electrical Measurements

Selective growth of Ge₁₋_xSn_xepitaxial layer on patterned SiO₂/Si substrate by metal–organic chemical vapor deposition

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Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition

Cited by 11 publications

References 19 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnxEpitaxial Layers by Electrical Measurements

Selective growth of Ge1−xSnxepitaxial layer on patterned SiO2/Si substrate by metal–organic chemical vapor deposition

Contact Info

Product

Resources

About

Characterization of Shallow- and Deep-Level Defects in Undoped Ge₁₋_xSn_xEpitaxial Layers by Electrical Measurements

Selective growth of Ge₁₋_xSn_xepitaxial layer on patterned SiO₂/Si substrate by metal–organic chemical vapor deposition