Characterization of Cu(In,Ga)S2 crystals grown from the melt

Recent developments in the synthesis of nanostructured chalcopyrite materials and their applications: a review

“…15,16 In the quaternary mixed alloy systems, the lattice constants, a and c, are observed to change linearly in relation to x, with a composition of x ¼ $0.8 seen to achieve the ideal c ¼ 2a ratio. [17][18][19][20] Although X-ray diffraction (XRD) analysis provides a useful tool for correlating processing parameters with structural composition, the co-existence of impurity phases within CIGS material systems can be difficult to differentiate. Stacking fault densities and dislocations along the [112] crystal plane are known to occur in Cu-poor CuInS 2 lms.…”

Characterization of CuInS2‐Cu2ZnSnS4 crystals grown from the melt

“…We have tried to grow Cu 2 ZnSnS 4 crystals from the melt; however, obtained crystals always contained secondary phases as described later. But fortunately we had experienced CuInS 2 crystals could be easily prepared with the same method [6]. The idea to combine these materials was simply come up with to obtain kesterite based bulk crystals.…”

Atomic-scale structure, cation distribution, and bandgap bowing in Cu(In,Ga)S2 and Cu(In,Ga)Se2

“…8 As evident from Figure Figure 1(b). The linear change of the lattice constants observed with diffraction studies 13 and known as Vegard's Law is thus achieved mainly by bond bending, which is known to be energetically favored over bond stretching in tetrahedrally coordinated systems. 7,14,15 The local atomic arrangements of Cu(In,Ga)S 2 therefore exhibit a striking deviation from the long-range crystallographic structure and the material is characterized by structural inhomogeneity on the atomic scale even if compositional fluctuations or secondary phases are absent.…”