Characterization of Cu(In,Ga)Se2 films by Raman scattering

Sulfurization of Co-Evaporated Cu(In,Ga)Se2 as a Postdeposition Treatment

“…These peaks are both ascribed to A1 modes, which result from vibration of the anions while the cations remain at rest. The peak at 178 cm -1 is associated with vibration of Se atoms in CIGSe [14,15]. This mode is observed at 174 cm -1 in CuInSe 2 and 184 cm -1 in CuGaSe 2 [15], and shifts in an approximately linear fashion in CuIn y Ga y-1 Se 2 alloys with the A1(Se-Se) peak position following 174 + 12.9y [14].…”

“…The peak at 178 cm -1 is associated with vibration of Se atoms in CIGSe [14,15]. This mode is observed at 174 cm -1 in CuInSe 2 and 184 cm -1 in CuGaSe 2 [15], and shifts in an approximately linear fashion in CuIn y Ga y-1 Se 2 alloys with the A1(Se-Se) peak position following 174 + 12.9y [14]. In Ga-free alloys with sulfur, CuIn(S x Se x-1 ) 2 , it is observed that the A1(Se-Se) peak shifts to higher frequencies and reduces in intensity with increasing x [16,17].…”

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

“…There are just a few experimental investigations on the lattice vibrations of quaternary chalcopyrites [5, 16, 33-35, 56, 57], and even fewer Raman studies on the compositional dependence of quaternary thin film alloys [5,34,35], the most extended one being, in our knowledge, Ref. [5].…”

“…There are also several Raman studies on CuInSe 2 single crystals [17], [27], thin films [28][29][30], alloyed materials [31,32] and the ordered vacancy compound (CuIn 3 Se 5 ) [25]. On the contrary, there are just a few studies published on the Raman scattering from CuIn 1-x Ga x Se 2 films [16], [33][34][35]. This review focuses, therefore, on the lattice vibrations, structural phases, compositional and disorder effects that have been extensively studied by Raman spectroscopy on the ternary chalcopyrites and briefly summarises the results of current Raman studies on the compositional dependence of quaternary chalcopyrite selenides.…”

Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

“…4. The intense peak at near 175 cm -1 is due to the A 1 mode of CIGS, and the diffuse peak within 200-250 cm -1 is assigned to the B 2 /E mode of CIGS [3,[19][20][21][22]. Except to the above results, any other peak is invisible in the Raman spectra.…”