Characterization of Cu2ZnSn(S,Se)4 film by selenizing Cu2ZnSnS4 precursor film from co-sputtering process

Tuning the Se Content in Cu2ZnSn(S, Se)4 Absorber to Achieve 9.7% Solar Cell Efficiency from a Thiol/Amine-Based Solution Process

“…Investigations into the major factors limiting CZTSSe device performance have been accurately addressed by various theoretical and experimental studies; these include the large open-circuit voltage deficit ( V oc,def ), the fluctuant band gap, the high defect density, and the narrow phase stability region. − However, it is rather challenging to overcome these major limitations and intrinsic factors in CZTSSe solar cells. This triggered a global effort to further seek environmentally friendly processes and improve the photovoltaic performance of CZTSSe solar cells. − …”

Pure sulfide kesterite solar cells with cation substituted absorber and back contact intermediate layer

“…Thus, prevention of Sn loss seems to be crucial to suppress secondary phase during fabrication of CZTS thin films by the precursor method. The co-sputtering technique can also be used to produce CZTS films [73][74][75][76] (see Fig. 2.6b).…”

“…6.4c). For B1 sample, the separation of 8.3 eV between the Sn 3d5/2 and Sn 3d3/2 peaks located at binding energies of 486.7 eV and 495 eV respectively indicates the presence of Sn(IV) ions[65,75,84]. As Mo co-sputtering power increases, a marked change of the Sn 3d3/2 peak shape is observed.…”