Characterization of damage induced by FIB etch and tungsten deposition in high aspect ratio vias

Drezner, Yariv; Fishman, D.; Greenzweig, Yuval; Raveh, Amir

doi:10.1116/1.3539204

Cited by 28 publications

(25 citation statements)

References 40 publications

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“…In the so-called Focused Electron Beam Induced Deposition (FEBID) and Focused Ion Beam Induced Deposition (FIBID) techniques, the attained lateral resolution of the deposits is regularly within a few tens of nm, but proof-of-concept experiments have shown resolution as good as 3 nm for the growth of Pt-based dots by FEBID 13 , and 10 nm for the growth of cobalt lines by He + -FIBID 14 . FEBID/FIBID techniques have found applications for the local growth of metal lines used to establish electrical connection between different parts of microelectronic circuits during circuit edit 15,16 , for the restoration of material continuity when repairing defects found in optical masks 17,18 , and, more recently, for the growth of functional materials in the fields of magnetism 19,20 , superconductivity 21 , nano-devices 22 , nano-optics and plasmonics 23,24 , and sensing 25 . In these applications, FEBID and FIBID bring in a high lateral resolution, the capability for three-dimensional growth, the functionality of the deposited material, the tunability of the deposit composition during growth or by post-processing, and the freedom in the choice of substrate.…”

Section: Introductionmentioning

confidence: 99%

Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

Córdoba

Orús

Strohauer

et al. 2019

Sci Rep

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An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of −100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Induced Deposition (Cryo-FIBID). The most important advantages of Cryo-FIBID are the fast growth rate (about 600 times higher than conventional FIBID with the precursor material in gas phase) and the low ion irradiation dose required (∼50 μC/cm2), which gives rise to very low Ga concentrations in the grown material and in the substrate (≤0.2%). Electrical measurements indicate that W-C layers and nanowires grown by Cryo-FIBID exhibit metallic resistivity. These features pave the way for the use of Cryo-FIBID in various applications in micro- and nano-lithography such as circuit editing, photomask repair, hard masks, and the growth of nanowires and contacts. As a proof of concept, we show the use of Cryo-FIBID to grow metallic contacts on a Pt-C nanowire and investigate its transport properties. The contacts have been grown in less than one minute, which is considerably faster than the time needed to grow the same contacts with conventional FIBID, around 10 hours.

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Section: Introductionmentioning

confidence: 99%

Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

Córdoba

Orús

Strohauer

et al. 2019

Sci Rep

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show abstract

“…Focused electron beam and focused ion beam (FIB) induced processing (IP) are well documented techniques. 19,20 While gallium FIB IP (Ga-FIBIP) has been used historically in many applications, 21,22 the resolution and gallium staining have made it obsolete as a mask repair tool for current and future state-of-the-art lithography masks. 23,24 The enhanced resolution of the new gas field ion source (GFIS) microscope [25][26][27] compared to liquid gallium ion sources and the fact that the species are inert gases makes it an intriguing option to study for mask repair.…”

Section: Introductionmentioning

confidence: 99%

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Gonzalez¹,

Timilsina²,

Li³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…However, in sharp contrast with FEBID, FIBID causes substantial beam-induced damage on the substrate (amorphization, implantation, defects, etc. ), which can be detrimental in some cases [21][22][23][24].…”

Section: Focused Electron/ion Beam-induced Deposition Techniquesmentioning

confidence: 99%

“…In Figure 1, various applications of FEBID and FIBID are sketched: the growth of in-plane and three-dimensional nanostructures on flat substrates [25], as well as on unconventional substrates such as cantilevers/tips [26], and flexible [27], insulating [28] or origami substrates [28], etc. Materials grown by FEBID/FIBID are currently used for circuit edit and mask repair in the semiconductor industry [24,[29][30][31], lamellae preparation [7], the placement of electrical contacts to micro-and nano-structures [32,33], for producing sensors [34,35] and magnetic tips [36][37][38], plasmonic [39][40][41][42] and nano-optical elements [43], superconducting films [44] and nanowires [45], etc. Although FEBID/FIBID is an active field of research and development, a wider impact is hampered by the limited process speed.…”

Section: Focused Electron/ion Beam-induced Deposition Techniquesmentioning

confidence: 99%

Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions

2019

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In this contribution, we compare the performance of Focused Electron Beam-induced Deposition (FEBID) and Focused Ion Beam-induced Deposition (FIBID) at room temperature and under cryogenic conditions (the prefix "Cryo" is used here for cryogenic). Under cryogenic conditions, the precursor material condensates on the substrate, forming a layer that is several nm thick. Its subsequent exposure to a focused electron or ion beam and posterior heating to 50 • C reveals the deposit. Due to the extremely low charge dose required, Cryo-FEBID and Cryo-FIBID are found to excel in terms of growth rate, which is typically a few hundred/thousand times higher than room-temperature deposition. Cryo-FIBID using the W(CO) 6 precursor has demonstrated the growth of metallic deposits, with resistivity not far from the corresponding deposits grown at room temperature. This paves the way for its application in circuit edit and the fast and direct growth of micro/nano-electrical contacts with decreased ion damage. The last part of the contribution is dedicated to the comparison of these techniques with other charge-based lithography techniques in terms of the charge dose required and process complexity. The comparison indicates that Cryo-FIBID is very competitive and shows great potential for future lithography developments.

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Characterization of damage induced by FIB etch and tungsten deposition in high aspect ratio vias

Cited by 28 publications

References 40 publications

Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions

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