Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Abstract

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B-and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation

“…Defects can be created in the semiconductors unintentionally during device processing, or intentionally by radiation. Several researchers have reported on the radiation induced defects in p-type Si [1][2][3][4][5][6][7], but there is still lack of understanding on the type of radiation particles that creates defects during device fabrication by electron beam deposition (EBD). The EBD process is an essential processing step for the deposition of high melting point metals on semiconductor surface.…”