Characterization of Defects in Gallium Nitride Thin Films by SEM

Abstract

Gallium nitride (GaN) thin films samples were grown by metal-organic chemical vapor deposition (MOCVD) with ammonia and trimethyl-gallium, and the samples were annealed rapidly at different temperature. The scanning electron microscope (SEM) analysis was employed to study the surface morphology and lattice defects of the GaN thin films. The surface morphology of the thin films prepared at different condition was uniform and smoothly. The relationship of the films defects and the annealed temperature were summarized.

Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

“…5 Although the III-nitride based devices are key elements for the development of new highly efficient LEDs and lasers, their reliability and efficiency depends strongly on the precise knowledge of optical constants. 6 Thin films of GaN, AlN, and their alloys have been deposited by a variety of deposition processes including sputtering, 7,8 metal-organic chemical vapor deposition (MOCVD), [9][10][11] plasma enhanced-CVD, 12 molecular beam epitaxy (MBE), 13,14 and atomic layer deposition (ALD). [15][16][17] During the last decade, numerous papers have been published on the deposition of epitaxial layers of GaN, AlN, and their alloys using both the MOCVD and MBE methods.…”