Characterization of double modified internal gate pixel by 3D simulation study

Abstract

We have developed a novel detector concept based on Modified Internal Gate Field Effect Transistor (MIGFET) wherein a buried Modified Internal Gate (MIG) is implanted underneath a channel of a FET. In between the MIG and the channel of the FET there is a depleted semiconductor material forming a potential barrier between charges in the channel and similar type signal charges located in the MIG. The signal charges in the MIG have a measurable effect on the conductance of the channel. In this paper a double MIGFET pixel is investigated comprising two MIGFETs. By transferring the signal charges between the two MIGs Non-Destructive Correlated Double Sampling Readout (NDCDSR) is enabled.The proposed MIG radiation detector suits particularly well for low-light-level imaging, X-ray spectroscopy, as well as synchrotron and X-ray Free Electron Laser (XFEL) facilities. The reason for the excellent X-ray detection performance stems from the fact that interface related issues can be considerably mitigated since interface generated dark noise can be completely avoided and interface generated 1/ f and Random Telegraph Signal (RTS) noise can be considerably reduced due to a deep buried channel readout configuration.Electrical parameters of the double MIGFET pixel have been evaluated by 3D TCAD simulation study. Simulation results show the absence of interface generated dark noise, significantly reduced interface generated 1/ f and RTS noise, well performing NDCDSR operation, and blooming

Novel silicon drift detector design enabling low dark noise and simple manufacturing

“…The anode is marked with green colour in figure 2 because it could be replaced e.g. with a Modified Internal Gate (MIG) readout transistor [7].…”