In pixelated silicon radiation detectors that are utilized for the detection of UV, visible, and in particular Near Infra-Red (NIR) light it is desirable to utilize a relatively thick fully depleted Back-Side Illuminated (BSI) detector design providing 100% Fill Factor (FF), low Cross-Talk (CT), and high Quantum Efficiency (QE).The optimal thickness of such detectors is typically less than 300 µm and above 40 µm and thus it is more or less mandatory to thin the detector wafer from the backside after the front side of the detector has been processed and before a conductive layer is formed on the backside. A TAIKO thinning process is optimal for such a thickness range since neither a support substrate on the front side nor lithographic steps on the backside are required. The conductive backside layer should, however, be homogenous throughout the wafer and it should be biased from the front side of the detector.In order to provide good QE for blue and UV light the conductive backside layer should be of opposite doping type than the substrate. The problem with a homogeneous backside layer being of opposite doping type than the substrate is that a lot of leakage current is typically generated at the sawed chip edges, which may increase the dark noise and the power consumption. These problems are substantially mitigated with a proposed detector edge arrangement which 2D simulation results are presented in this paper.

JINST 10 C02047chain. In this work the design and operation principle of the proposed SDD is presented. The operation of the proposed SDD has been evaluated on TCAD with cylindrically symmetric 3D process and device simulations.

We have developed a novel detector concept based on Modified Internal Gate Field Effect Transistor (MIGFET) wherein a buried Modified Internal Gate (MIG) is implanted underneath a channel of a FET. In between the MIG and the channel of the FET there is a depleted semiconductor material forming a potential barrier between charges in the channel and similar type signal charges located in the MIG. The signal charges in the MIG have a measurable effect on the conductance of the channel. In this paper a double MIGFET pixel is investigated comprising two MIGFETs. By transferring the signal charges between the two MIGs Non-Destructive Correlated Double Sampling Readout (NDCDSR) is enabled.The proposed MIG radiation detector suits particularly well for low-light-level imaging, X-ray spectroscopy, as well as synchrotron and X-ray Free Electron Laser (XFEL) facilities. The reason for the excellent X-ray detection performance stems from the fact that interface related issues can be considerably mitigated since interface generated dark noise can be completely avoided and interface generated 1/ f and Random Telegraph Signal (RTS) noise can be considerably reduced due to a deep buried channel readout configuration.Electrical parameters of the double MIGFET pixel have been evaluated by 3D TCAD simulation study. Simulation results show the absence of interface generated dark noise, significantly reduced interface generated 1/ f and RTS noise, well performing NDCDSR operation, and blooming

The radiation hardness of the proposed double MIGFET structure stems from the fact that interface related issues can be considerably mitigated. The reason for this is, first of all, that interface generated dark noise can be completely avoided and secondly, that interface generated 1/f noise can be considerably reduced due to a deep buried channel readout configuration.Electrical parameters of the double MIGFET pixel have been evaluated by 3D TCAD simulation study. Simulation results show the absence of interface generated dark noise, significantly reduced interface generated 1/f noise, well performing NDCDSR operation, and blooming protection due to an inherent vertical anti-blooming structure. In addition, the backside illuminated thick fully depleted pixel design results in low crosstalk due to lack of diffusion and good quantum efficiency from visible to Near Infra-Red (NIR) light. These facts result in excellent Signal-to-Noise Ratio (SNR) and very low crosstalk enabling thus excellent image quality. The simulation demonstrates the charge to current conversion gain for source current read-out to be 1.4 nA/e.

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