Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

Kalliopuska, J.; Tlustos, L.; Eränen, Simo; Virolainen, Tuula

doi:10.1016/j.nima.2011.01.006

Cited by 16 publications

(12 citation statements)

References 4 publications

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“…The cathodeside patterned detector, in figure 7(b), did not show this kind of behavior, as is expected. For reference, see article [6], where the similar behavior has been demonstrated with edgeless silicon pixel detectors. patterned detector assembly during the high count rate acquisition period at 300 V. The reason for a poor contrast in the image is the fast onset of the polarization and thus low number of counts per pixel.…”

Section: Characterization With a Radiation Sourcementioning

confidence: 64%

Pixelized M-π-n CdTe detector coupled to Medipix2 readout chip

Kalliopuska

Nenonen²,

Penttilä

et al. 2011

J. Inst.

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We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm 2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.

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Section: Characterization With a Radiation Sourcementioning

confidence: 64%

Pixelized M-π-n CdTe detector coupled to Medipix2 readout chip

Kalliopuska

Nenonen²,

Penttilä

et al. 2011

J. Inst.

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“…A support wafer is needed to hold different sensors together once the trenches have been etched, and has to be removed at the end of the process. With this approach, planar sensors with a 20 μm gap between the active area and the detector edge were fabricated and successfully tested [7]. As anticipated, for operation in the foreseen energy range, specific process optimization steps are needed.…”

Section: Active Edge Sensormentioning

confidence: 99%

PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs

Ratti

Comotti

Fabris

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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“…Prototype sensors were fabricated on 150 /-Lm thick float zone v-type silicon [6]. Heavily doped n-type circular implants of 28 /-Lm diameter at 55 /-Lm pitch form the pixel matrix.…”

Section: The Sensormentioning

confidence: 99%

Active-Edge planar silicon sensors for large-area pixel detectors

Bosma

Heijne

Kalliopuska

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

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We study the influence of active edges on the response of edge pixels by comparing simulations of the electrostatic-potential distribution to position-defined measure ments on the energy deposition. A laser setup was used to measure the edge-pixel response function and shows the sensitive edge is only about 2 JIm from the physical edge. 3D reconstruction of tracks from high-energy pions and muons, produced at the SPS H6 test beam facility at CERN, enabled to relate the energy deposition at edge pixels to the particle's interaction depth. A clear correlation is observed between the simulated electric-field distortion and the reconstructed interaction-depth dependent effective size.

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Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

Cited by 16 publications

References 4 publications

Pixelized M-π-n CdTe detector coupled to Medipix2 readout chip

Pixelized M-π-n CdTe detector coupled to Medipix2 readout chip

PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs

Active-Edge planar silicon sensors for large-area pixel detectors

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