Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode

Yasutake, Kiyoshi; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Wakamiya, Takuya; Watanabe, Heiji

doi:10.1143/jjap.45.3592

Cited by 21 publications

(26 citation statements)

References 15 publications

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“…From these experimental findings, we believe that an intense reaction at the central part of the high-density AP hydrogen plasma forms a large amount of SiH x products and that they will decompose within the plasma downstream to form poly-Si films on the SiC surface. Considering that a high-quality epitaxial Si film is formed by AP-PCVD technique, 14 we believe that the plasma-induced damage can be neglected and that the amorphous layer remained at the central portion is attributed to the quenched surface with SiC x H y products.…”

Section: High-speed Etching Using Cylindrical Rotary Electrodementioning

confidence: 99%

“…Atmospheric pressure (AP) plasma has the advantage of generating high-density radical species, in which ion bombardment can be suppressed when using a 150-MHz very high-frequency (VHF) power supply. [13][14][15] Low-temperature growth of high-quality epitaxial Si films has been performed with the AP plasma chemical vapor deposition (PCVD) method using gas mixtures containing He, H 2 , and SiH 4 . In this study, aiming at damage-free and flat SiC surfaces under low process temperatures, we propose a novel and efficient surface cleaning and etching method of SiC wafers using AP hydrogen plasma.…”

Section: Introductionmentioning

confidence: 99%

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Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma

Watanabe¹,

Ohmi²,

Kakiuchi³

et al. 2011

J. Nanosci. Nanotech.

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We propose low-damage and high-efficiency treatment of 4H-SiC(0001) surfaces using atmospheric pressure (AP) hydrogen plasma. Hydrogen radicals generated by the AP plasma was found to effectively remove damaged layers on SiC wafers and improve surface morphology by isotropic etching. Localized high-density AP plasma generated with a cylindrical rotary electrode provides a high etching rate of 1.6 microm/min and yields smooth morphology by eliminating surface corrugation and scratches introduced by wafer slicing and lapping procedures. However, high-rate etching with localized plasma was found to cause an inhomogeneous etching profile depending on the plasma density and re-growth of the poly-Si layer at the downstream due to the decomposition of the vaporized SiH(x) products. On the other hand, for the purpose of achieving moderate etching and ideal cleaning of SiC surfaces, we demonstrated the application of a novel porous carbon electrode to form delocalized and uniform AP plasma over 4 inches in diameter. We obtained a reasonably moderate etching rate of 0.1 microm/min and succeeded in fabricating damage-free SiC surfaces.

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Section: High-speed Etching Using Cylindrical Rotary Electrodementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma

Watanabe¹,

Ohmi²,

Kakiuchi³

et al. 2011

J. Nanosci. Nanotech.

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“…Therefore, the reduction of substrate heating temperature and the suppression of ion damage of the film are simultaneously expected by utilizing atmospheric pressure plasma. In contrast to the conventional PECVD technique, it is shown that AP-PCVD is a promising technique for the high-rate and low-temperature growth of high-quality functional thin films [4][5][6][7][8][9][10]. The aim of this study is to develop a new technology for the formation of gate oxide layers with good dielectric strength, low interface trap density and low fixed oxide charge density, utilizing the physical and chemical properties of atmospheric pressure plasma.…”

Section: Introductionmentioning

confidence: 99%

Formation of silicon dioxide layers at low temperatures (150—400°C) by atmospheric pressure plasma oxidation of silicon

Kakiuchi¹,

Ohmi

Harada

et al. 2007

Science and Technology of Advanced Materials

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The formation of silicon dioxide (SiO 2 ) layers at low temperatures (150-400 1C) by atmospheric pressure plasma oxidation of Si(0 0 1) wafers have been studied using a gas mixture containing He and O 2 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density atomic oxygen in the atmospheric pressure plasma. Oxidation rate, structure, and thickness and refractive index profiles of the oxidized layers were investigated by ellipsometry and infrared absorption spectroscopy. Atomic force microscopy was also employed to observe atomic-scale morphologies of the layer surface and wafer Si surface, after chemical removal of the oxidized layers. It was found that stoichiometric SiO 2 layers were obtained at higher oxidation rates than conventional dry O 2 thermal oxidation and radical oxidation processes, even at a very low substrate temperature of 150 1C. Although thickness variations were observed in the plasma region, the refractive index was independent of both substrate temperature and VHF power. In addition, the SiO 2 surface and SiO 2 /Si interface roughnesses were comparable to those obtained in conventional dry oxidation at high temperatures. r

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“…The RHEED image in the milky part shows a polycrystalline ring pattern. Although the central part of the Si film is a defect-free single crystal, 9,10) the growth of a high-quality epitaxial Si film on the entire wafer surface is impossible by scanning the substrate, Deposition time (min) 1. 5 4 -5 because the polycrystallization at the film edge on the upstream side affects the crystallinity of the deposited Si film.…”

Section: Characterization Of Si Films Grown Using Cylindricalmentioning

confidence: 99%

Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

Ohmi

Kakiuchi

Tawara

et al. 2006

Jpn. J. Appl. Phys.

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The low-temperature growth of epitaxial Si films by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) was investigated. A 150 MHz very high frequency (VHF) power supply was used to generate an atmospheric pressure plasma of gas mixtures containing He, H 2 , and SiH 4 . Two types of electrode (i.e., cylindrical rotary and porous carbon electrodes) were used in plasma generation. When a cylindrical rotary electrode was used, polycrystalline Si growth was inevitable at the film edge on the upstream side. This is due to the variation in deposition rate along the gas flow direction, which is extremely high at the plasma/atmosphere interface on the upstream side. To solve this problem, we developed a novel porous carbon electrode where process gas molecules are directly supplied into the plasma region through a porous carbon plate a distance (0.8 mm) away from the substrate surface. Using such a porous carbon electrode, we successfully grew a defect-free epitaxial Si film on the entire surface of a 4 in. Si wafer at 600 C. The average growth rate was 0.25 -0.3 mm/min, which is as high as that obtained by thermal CVD at 900 C. The epitaxial Si films grown at 600 C were characterized by various methods, including transmission electron microscopy, atomic force microscopy, secondary ion mass spectrometry, and selective etching. The influence of adsorbed impurities in the porous carbon material on the quality of epitaxial Si films was also investigated.

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Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode

Cited by 21 publications

References 15 publications

Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma

Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma

Formation of silicon dioxide layers at low temperatures (150—400°C) by atmospheric pressure plasma oxidation of silicon

Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

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